High quality single crystal films of AlxGa1−xN have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 °C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be+ and N+ implants in the layers was studied. Schottky barriers were fabricated and their current voltage characteristics were studied. We also report some initial results of a study of GaN growth kinetics.

In this letter we report the fabrication and optical-electrical characterization of violet-blue GaN homojunction light emitting diodes. Rapid thermal annealing at 1150 °C (for 30 s) was used to activate the p-dopant species (Mg), which resulted in p-type GaN whose photoluminescence response centered around 438 nm is much stronger than that obtained from material annealed in the growth chamber at lower temperatures (700–800 °C) and a longer time (20 min).

Articles you may be interested inA simple velocity model for lowpressure metalorganic chemical vapor deposition Appl. Phys. Lett. 67, 869 (1995); 10.1063/1.115532 Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition J. Vac. Sci. Technol. A 13, 672 (1995); 10.1116/1.579805 Low pressure metalorganic chemicalvapor deposition of cubic GaN over (100) GaAs substrates Appl.Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition Verticalcavity, roomtemperature stimulated emission from photopumped GaN films deposited over sapphire substrates using lowpressure metalorganic chemical vapor deposition Appl. Phys. Lett. 58, 1515Lett. 58, (1991;

AlxGa1−xN-GaN quantum wells were grown on basal plane sapphire by low-pressure metalorganic vapor deposition. The photoluminescence spectra of samples of different well thicknesses and x values were measured. The experimental data were compared with the calculated solutions of the finite square quantum well and the bound states involved in the optical transition were identified.

We report the observation of room temperature violet (415 nm) stimulated emission in the vertical cavity mode from photopumped GaN/In0.25Ga0.75N heterojunctions. The InGaN/GaN heterojunction was deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition and was of high enough optical quality to achieve room-temperature stimulated emission. The observed emission intensity was found to be a nonlinear function of incident optical pump power density. At threshold we observe a clear line narrowing of the output optical signal from 20 to 1.5 nm full width at half-maximum.