Low pressure plasma etching of silicon carbide

Kim, B.; Kim, S.; Lee, B.T.

doi:10.1007/s00339-004-2774-z

Cited by 2 publications

(1 citation statement)

References 17 publications

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“…The NWs were characterized by fabrication into field effect transistors (FETs) utilizing a high-throughput approach [17] that produces statistically significant sample populations. Indium oxide NWs were chosen for the study because In 2 O 3 NWs fabricated by laser-ablation in previous studies have been shown to reproducibly have good transport properties, with mobilities ∼111 cm 2 V −1 s −1 [12,[18][19][20]. Furthermore, these NWs a Note that samples from CVD #1 do not constitute a statistical sample and, as such, the error reported is the standard deviation, not the standard error of the mean.…”

Section: Introductionmentioning

confidence: 99%

Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

et al. 2006

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A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 °C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V−1 s−1 versus 10.2 ± 1.9 cm2 V−1 s−1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs.

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