1983
DOI: 10.1143/jjap.22.l683
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Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p+ Si Layers Formed by Halogen Lamp Annealing

Abstract: Contact resistance of Al/Si Ohmic electrodes formed on boron implanted shallow p+ layers has been measured, where the annealing of ion implanted layers was performed by halogen lamp rapid heating at different temperatures ranging from 900°C to 1100°C. Contact resistance decreases gently with increasing temperature and becomes constant at above 950°C. Specific contact resistance of 1.5×10-7 Ohm-cm2 was attained at doses above 4×1015 cm-2 and at temperatures above 950°C. This value is very low and more than one … Show more

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Cited by 7 publications
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