Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy

Dong, Yingda; Scott, D.; Wei, Ying; Gossard, A. C.; Rodwell, M.J.W.

doi:10.1016/s0022-0248(03)01346-0

Cited by 8 publications

(5 citation statements)

References 9 publications

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“…Grain size is generally inferred from the SEM. As expected grain size increases with temperature, the average grain size is 100, 250, and 500 nm at substrate temperature of 480, 520, and 560 • C. Dong [12] reported that the gain size of polycrystalline GaSb films grown by MBE at 520 • C was about 250 nm, so here the grain size of thin films grown by co-evaporation appears as large as the results grown by MBE.…”

Section: Structural Property and Surface Morphology Of Polycrystallin...supporting

confidence: 68%

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Polycrystalline GaSb thin films grown by co-evaporation

Qiao

Sun

et al. 2009

J. Semicond.

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We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the (111) direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 °C. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 104 cm−1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/ Sb-evaporation-temperature (TGa/TSb) ratio increases. When the Ga crucible temperature is 810 °C and the antinomy crucible temperature is 415 °C, the hole concentration of polycrystalline GaSb is 2 × 1017 cm−3 and the hole mobility is 130 cm2/(V·s). These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells.

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Section: Structural Property and Surface Morphology Of Polycrystallin...supporting

confidence: 68%

“…The bulk crystal growth was focused on GaSb by different techniques: vertical feeding method (VFM) [5,6] to obtain polycrystalline ingots and Czochralski (CZ) [7−9] method to obtain monocrystalline ingots. The film growth is mainly focused on quaternary GaInAsSb on GaSb substrates by MOVPE [10] , MBE [11,12] or LPE [13−15] method.…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline GaSb thin films grown by co-evaporation

Qiao

Sun

et al. 2009

J. Semicond.

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“…GaSb is an important III-V semiconductor for detectors, semiconductor lasers, and thermophotovoltaic devices which operate in the mid-infrared range. [1] Organic metallic vapour phase epitaxy, [2] molecular beam epitaxy [3,4] and liquid phase epitaxy [5,6] have been utilized in the growth of GaSb material. All these methods are high processing cost technologies; one possibility of reducing the processing cost is the co-evaporation method.…”

Section: Introductionmentioning

confidence: 99%

Raman scattering of polycrystalline GaSb thin films grown by the co-evaporation process

Qiao

Sun

et al. 2009

Chinese Phys. B

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This paper reports that GaSb thin films have been co-deposited on soda-lime glass substrates. The GaSb thin film structural properties are characterized by Raman spectroscopy. The Sb–A1g/GaSb–TO ratio decreases rapidly with the increase of substrate temperature, which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease. In Raman spectra, the transverse optical (TO) mode intensity is stronger than that of the longitudinal optical (LO) mode, which indicates that all the samples are disordered. The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the GaSb thin film. A downshift of the TO and LO frequencies of the polycrystalline GaSb thin film to single crystalline bulk GaSb Raman spectra is also observed. The uniaxial stress in GaSb thin film is calculated and the value is around 1.0 GPa. The uniaxial stress decreases with increasing substrate temperature. These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.

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“…12,14 The smaller resistivity in the polycrystalline samples could be caused by the so-called charge trapping effect, which is commonly observed in polycrystalline semiconductors. [34][35][36] It is known that the charge ͑electron or hole͒ can be easily trapped by defects and dangling bonds at the grain boundaries, and sometimes, the resistivity of the whole sample is reduced due to relatively high conducting channels in the grain boundaries, as reported in polycrystalline Ge ͑Ref. 34͒ and GaSb ͑Ref.…”

Section: Transport Propertiesmentioning

confidence: 99%

Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering

et al. 2008

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Chromium doped zinc telluride thin films with various doping concentrations are fabricated by magnetron sputtering. These films are ferromagnetic and the Curie temperature increases with Cr concentration. X-ray diffraction, transmission electron microscopy, and magnetic circular dichroism characterizations show that the films are free of Cr 1−x Te x impurities and the ferromagnetism is intrinsic. The transport study shows that the resistivity and magnetoresistance are governed by variable range hopping at low temperatures. A negative magnetoresistance as large as −57% is observed at 5 K. The magnetoresistance and its temperature dependence can be well explained by a model involving an increase in the localization length of carriers with a magnetic field in the hopping region. An anomalous Hall effect is also observed and a possible origin of the sign difference between the anomalous Hall resistance and ordinary Hall resistance is discussed.

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Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy

Cited by 8 publications

References 9 publications

Polycrystalline GaSb thin films grown by co-evaporation

Polycrystalline GaSb thin films grown by co-evaporation

Raman scattering of polycrystalline GaSb thin films grown by the co-evaporation process

Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering

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