2011
DOI: 10.1007/s00542-011-1248-4
|View full text |Cite
|
Sign up to set email alerts
|

Low resistive silicon substrate as an etch-stop layer for drilling thick SiO2 by spark assisted chemical engraving (SACE)

Abstract: Controlling precisely the depth in glass microdrilling by spark assisted chemical engraving (SACE) remains challenging, particularly for low depths. The possibility of using an electrically conductive material as an etch-stop layer for SACE gravity-feed drilling is investigated in this paper. Micromachining with constant DC and pulsed DC of 30-35 lm thick SiO 2 deposited on low resistive silicon substrate demonstrated the etch-stop function of the conductive silicon. Measurements of etch rates and hole profile… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2012
2012
2023
2023

Publication Types

Select...
3
1

Relationship

1
3

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 21 publications
0
1
0
Order By: Relevance
“…Technologies such as deep reactive ion etching (DRIE) 19,20 and laser machining 21 are reported for the highaspect ratio micromachining of silica layer, but they are expensive, complex, and time consuming. Recently, a lowcost, nontraditional micromachining technology called spark assisted chemical engraving (SACE) 22 has been employed for the machining of silica layer deposited on silicon substrate. Development of microfluidic channel and optical waveguide on SOS using SACE is still underway, due to high roughness surface associated with the SACE.…”
Section: Introductionmentioning
confidence: 99%
“…Technologies such as deep reactive ion etching (DRIE) 19,20 and laser machining 21 are reported for the highaspect ratio micromachining of silica layer, but they are expensive, complex, and time consuming. Recently, a lowcost, nontraditional micromachining technology called spark assisted chemical engraving (SACE) 22 has been employed for the machining of silica layer deposited on silicon substrate. Development of microfluidic channel and optical waveguide on SOS using SACE is still underway, due to high roughness surface associated with the SACE.…”
Section: Introductionmentioning
confidence: 99%