Low-Resistivity Highly Transparent Indium-Tin-Oxide Thin Films Prepared at Room Temperature by Synchrotron Radiation Ablation

Abstract

Previous studies of the optical absorption bands attributed to the 3A2 + 3T,(F) internal transitions of V3+ ions in Gap, GaAs and InP have shown that a very strong T 8 t 2Jahn-Teller effect is active in the 'T,(F) state. An analysis is presented for the GaP:V3+ system which reconciles the structure of the accompanying zero-phonon line in terms of second-order Jahn-Teller spin-orbit coupling contributions, with the strength of the coupling deduced from the properties of the band. In the cases of GaAs: V3+ and InP : V3+, it is proposed that strong coupling to e modes is also present. Relative energy J=I (T,l, J -2 ( E ) J 3 1 (TI) 30 -3 6 o -3 6 -f~ J . 2 ( E l 3101 J = 2 (Tzl J = 2 IT2) 3a -3b -$c I a t J = 0 (A,) J = 0 ( A , )

Pulsed Laser Deposition of Transparent Conducting Indium Tin Oxide Films in Magnetic Field Perpendicular to Plume

“…In particular, indiumtin oxide (ITO) films are widely used as transparent electrodes in this field. In order to fabricate low-resistivity ITO films, several methods such as sol-gel process, 1) rf magnetron sputtering, 2) molecular-beam epitaxy, 3) dc magnetron sputtering, 4) synchrotron radiation ablation, 5) and pulsed laser deposition (PLD) with KrF (248 nm) excimer laser 6) have been used. The values of ρ for ITO films obtained by these methods ranged from 3.2 × 10 −4 ·cm to 1.3 × 10 −4 ·cm.…”

Enhanced energy harvesting from shadow-effect: mechanism and a new device geometry

“…The transmission decays rapidly below 400 nm corresponding to the absorption edge of ITO and becomes almost zero at about 300 nm. [6][7][8] The sheet resistance of the 155 nm thick ITO films is ≈ 45 ± 3 ohm. The result of current-voltage (I-V) measurement across the ITO/n-Si junction carried out in dark is shown in figure 1(d for n-type Si.…”

“…[3][4][5] ITO is a transparent conducting oxide having ≈ 85 to 90% transmission in the visible and near IR spectral region along with a resistivity of the order of ≈ 10 −4 ohm-cm. [6][7][8] In fact, ITO/n-Si heterojunction devices are already being reported as solar cell. 9,10 A relatively thick layer of ITO can be used which will still have more than 80% transmission, but have a low sheet resistance, that would enable high power to be drawn from the device.…”

Room Temperature Growth of Indium Tin Oxide Films By Ultraviolet-Assisted Pulsed Laser Deposition

“…The use of the pulsed laser deposition (PLD) technique, which has several important advantages [4], has allowed the growth of good quality indium tin oxide (ITO) thin films at relatively low temperatures and even room temperature [5][6][7][8]. Other techniques such as synchrotron radiation ablation [9] or plasma-ion assisted evaporation [10] were also employed to deposit ITO films at room temperature. We investigated the use of an in situ ultraviolet-assisted PLD technique (UVPLD) for the growth of ITO films at room temperature.…”