Previous studies of the optical absorption bands attributed to the 3A2 + 3T,(F) internal transitions of V3+ ions in Gap, GaAs and InP have shown that a very strong T 8 t 2Jahn-Teller effect is active in the 'T,(F) state. An analysis is presented for the GaP:V3+ system which reconciles the structure of the accompanying zero-phonon line in terms of second-order Jahn-Teller spin-orbit coupling contributions, with the strength of the coupling deduced from the properties of the band. In the cases of GaAs: V3+ and InP : V3+, it is proposed that strong coupling to e modes is also present. Relative energy J=I (T,l, J -2 ( E ) J 3 1 (TI) 30 -3 6 o -3 6 -f~ J . 2 ( E l 3101 J = 2 (Tzl J = 2 IT2) 3a -3b -$c I a t J = 0 (A,) J = 0 ( A , )

We investigated the electrical and optical properties, the chemical composition, the surface morphology and the crystallinity of sputtered Sn-doped In203 films deposited on different substrate positions. Both the electric conductivity and the optical transparency are related to the free carrier density and moreover the preferred crystal orientation. The former relation is attributed to the Burstein-Moss effect and the latter suggests the Sn doping mechanism.