Low-resistivity SrRuO3 thin films formed on SiO2 substrates without buffer layer by RF magnetron sputtering

Kim, Hyun Min; Lee, Jong Hoon; Yom, Ahram; Lee, Han Sol; Kim, Dong Geun; Ko, Dong Wan; Kim, Hong Seung; Ahn, Ji‐Hoon

doi:10.1016/j.jallcom.2020.157627

Cited by 8 publications

(3 citation statements)

References 34 publications

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“…In particular, SRO can be epitaxially grown on SiO 2 /Si; 27,28) this makes it a useful material with which to connect Si electronics and oxide electronics and it may be able to overcome the limitations of existing electronics. Recently, researchers have tried growing high-quality SRO epitaxial films on SiO 2 /Si 27,29) with the goal of making dynamic random access memory 30) using SRO/SrTiO 3 (STO)/SRO high-k capacitors 25) on SiO 2 /Si. 28) Not only is high-quality epitaxial growth of SRO an essential issue from an engineering perspective; high-quality samples are indispensable for exploring the electronic states of SRO and understanding its transport properties and ferromagnetism.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic physics in magnetic Weyl semimetal SrRuO₃ films addressed by machine-learning-assisted molecular beam epitaxy

Wakabayashi

Krockenberger

Otsuka

et al. 2022

Jpn. J. Appl. Phys.

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The itinerant 4d ferromagnetic perovskite SrRuO3 [bulk Curie temperature (TC) = 165 K] has been studied extensively for many decades because of the unique nature of its ferromagnetism, metallicity, chemical stability, and compatibility with other perovskite-structured oxides. Recently, SrRuO3 has been gathering renewed interest as a magnetic Weyl semimetal and a two-dimensional ferromagnetic system. Ultra-high-quality SrRuO3 film growth techniques, combining oxide molecular beam epitaxy technology and a statistical machine learning method, have revealed new physics and physical properties of SrRuO3 as a magnetic Weyl semimetal, such as quantum transport of Weyl fermions and high-mobility two-dimensional carriers from surface Fermi arcs. This review summarizes the methods of growing ultra-high-quality SrRuO3 films and novel physics found in them. In addition, progress in crystal structure analyses and the electrical and magnetic properties of SrRuO3 over the last decade will also be discussed.

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Section: Introductionmentioning

confidence: 99%

Intrinsic physics in magnetic Weyl semimetal SrRuO₃ films addressed by machine-learning-assisted molecular beam epitaxy

Wakabayashi

Krockenberger

Otsuka

et al. 2022

Jpn. J. Appl. Phys.

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“…The SRO film had a low resistivity value of ∼600 μΩ•cm at a thickness of ∼40 nm, similar to resistivity values of SRO films deposited by sputtering or pulsed laser deposition. 23,24 The difference in resistance properties between SRO and ASRO films became more pronounced as the film thickness decreased; the sheet resistance of SRO films increased more steeply than that of ASRO films as the film thickness decreased. This difference could be ascribed to the different surface morphologies of the SRO and ASRO films.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Enhancing the Crystallization and Properties of the SrRuO₃ Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO₂ through Al Substitution

Lim

Kwon

et al. 2023

ACS Appl. Electron. Mater.

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SrRuO 3 (SRO) is a promising electrode material for the next-generation dynamic random access memory (DRAM) capacitor. This study focuses on the properties of SRO electrode films grown by combining the atomic-layer deposition of SrO and pulsed-chemical vapor deposition of RuO 2 component layers using Sr( i Pr 3 Cp) 2 ( i Pr 3 Cp = 1,2,4-trisisopropyl-cyclopentadienyl) and RuO 4 precursors, respectively. Changes in the Ru concentration and electrical properties of SRO electrode films during postdeposition annealing (PDA) for crystallization were examined in detail. SRO films were crystallized after PDA in an O 2 atmosphere, but the Ru concentration of SRO films was decreased due to volatile RuO 4 formation. Also, the morphology of the film was degraded by agglomeration, which degraded the film′s performance. A thin Al 2 O 3 film was deposited on or inserted into Ru and SRO films, and its effects on Ru-loss and crystallization were experimentally and theoretically investigated. The density functional theory calculation confirmed that Al substituted with Ru (Al Ru ) in the SRO film improved the crystallinity of cubic SRO. Thus, the Al 2 O 3 -layer-inserted or Al-substituted SRO films had a larger grain size, higher crystallinity, and improved surface morphology and maintained a lower resistivity down to 25 nm (∼1000 μΩ•cm).

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“…From these results, hexagonal or square surface lattice planes can lead to reasonable epitaxy of β-Ga 2 O 3 . Technically, SrRuO 3 (SRO) is considered as a pseudo-cubic structure with a compatibility to common ferroelectric materials, which is a type of deep work-function metal (5.2 eV) for the bottom electrode [28,29].…”

Section: Introductionmentioning

confidence: 99%

Fowler-Nordheim tunneling in β-Ga₂O₃/SrRuO₃ Schottky interfaces

Li¹,

Ji²,

Pan³

et al. 2022

J. Phys. D: Appl. Phys.

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Interfaces in heterostructures always emerge as prototype electronic devices with tunable functionality. Fundamental properties of the interfaces can be finely manipulated by epitaxy engineering. Recently, the heterostructures based on Ga2O3, an ultra-wide bandgap semiconductor, are reported for high power devices applications. Herein, we demonstrate a heterostructure of β-Ga2O3/SrRuO3 integrated on c-plane sapphire, the high density of edge dislocations is evidenced in the heterostructure interfaces. Apart from the dominated Schottky emission mechanism, the Fowler-Nordheim tunneling is also revealed by the leakage current analysis, which may be ascribed to the edge dislocations at the interfaces. These results boost the basic understanding on the ultra-wide bandgap materials and devices.

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Low-resistivity SrRuO3 thin films formed on SiO2 substrates without buffer layer by RF magnetron sputtering

Cited by 8 publications

References 34 publications

Intrinsic physics in magnetic Weyl semimetal SrRuO₃ films addressed by machine-learning-assisted molecular beam epitaxy

Intrinsic physics in magnetic Weyl semimetal SrRuO₃ films addressed by machine-learning-assisted molecular beam epitaxy

Enhancing the Crystallization and Properties of the SrRuO₃ Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO₂ through Al Substitution

Fowler-Nordheim tunneling in β-Ga₂O₃/SrRuO₃ Schottky interfaces

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Low-resistivity SrRuO3 thin films formed on SiO2 substrates without buffer layer by RF magnetron sputtering

Cited by 8 publications

References 34 publications

Intrinsic physics in magnetic Weyl semimetal SrRuO3 films addressed by machine-learning-assisted molecular beam epitaxy

Intrinsic physics in magnetic Weyl semimetal SrRuO3 films addressed by machine-learning-assisted molecular beam epitaxy

Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution

Fowler-Nordheim tunneling in β-Ga2O3/SrRuO3 Schottky interfaces

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Intrinsic physics in magnetic Weyl semimetal SrRuO₃ films addressed by machine-learning-assisted molecular beam epitaxy

Intrinsic physics in magnetic Weyl semimetal SrRuO₃ films addressed by machine-learning-assisted molecular beam epitaxy

Enhancing the Crystallization and Properties of the SrRuO₃ Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO₂ through Al Substitution

Fowler-Nordheim tunneling in β-Ga₂O₃/SrRuO₃ Schottky interfaces