Low‐Sintering High‐k Materials for an LTCC Application

Barth, S.; Arnold, Michael; Grützmann, Dieter; Capraro, Beate; Rothe, Peter; Bartnitzek, Thomas

doi:10.1111/j.1744-7402.2008.02313.x

Cited by 6 publications

(8 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The shrinkage of the dielectric tape starts at 800DC and is finished at 900DC [3]. The sintering characteristic of DP 951 is depicted in fig.…”

Section: Sintering and Materials Interactionsmentioning

confidence: 99%

“…The peak temperature of 875DC is applied for 30 minutes. The second one conforms to the sintering recommendation of the dielectric [3] and applies a peak temperature of 900DC for 2 hours.…”

Section: Sintering and Materials Interactionsmentioning

confidence: 99%

“…In previous works it was shown, that the addition of sintering aids to these materials lowers the sintering temperatures (typically 1300DC) to LTCC firing conditions [1,2]. The adapted high-k-tapes show good compatibility to silver pastes [2] and dielectric constants greater than 2000 [3].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Properties of high-k materials embedded in low temperature cofired ceramics

Bartsch

Grieseler

Müller

et al. 2010

3rd Electronics System Integration Technology Conference ESTC

Self Cite

View full text Add to dashboard Cite

Buried capacitors in low temperature co fired ceramics (LTCC) enable increased package density, shorter interconnects and reduced assembly time.The implementation of local patches of (high-k) Sr doped BaTi03-tape into a commercial L TCC material (DuPont 951 GreenTape™) using pressure assisted sintering resulted in areal capacitance densities up to 100 pF/mm2 for 29/lm thick dielectric layers. The influence of the firing conditions, the number of refires and the capacitor assembly on the capacitance was investigated. The k-values range between 161 and 367, depending on sintering conditions and design. That indicates the presence of a permittivity gradient at the contact area between low-and high-k materials, which depends on the metallization geometry and peak temperature. The material distribution at the interface was investigated using EDX analysis to demonstrate the effect of the electrodes as barrier layers to prevent dielectric interactions.Embedded capacitors with a plate area of 5.29 mm2 possessed capacitances greater than 500 pF with tolerances of 8 %. This matches the requirements of class K. The insertion loss of rf-components remained below -15 dB up to 50 GHz, which indicates very good noise suppression behaviour. The capacitors are thus suited for decoupling in the close vicinity of integrated circuits in ceramic packages.

show abstract

“…The shrinkage of the dielectric tape starts at 800DC and is finished at 900DC [3]. The sintering characteristic of DP 951 is depicted in fig.…”

Section: Sintering and Materials Interactionsmentioning

confidence: 99%

“…The peak temperature of 875DC is applied for 30 minutes. The second one conforms to the sintering recommendation of the dielectric [3] and applies a peak temperature of 900DC for 2 hours.…”

Section: Sintering and Materials Interactionsmentioning

confidence: 99%

See 1 more Smart Citation

Properties of high-k materials embedded in low temperature cofired ceramics

Bartsch

Grieseler

Müller

et al. 2010

3rd Electronics System Integration Technology Conference ESTC

Self Cite

View full text Add to dashboard Cite

show abstract

“…The low temperature co‐fired ceramics (LTCC) technology is one of the competent technologies that played a pivotal role in this development . The LTCC technology is capable to deliver better performance, stability, and miniaturization for the microwave devices at a lower cost . In LTCC technology, passives and metallic interconnects are embedded within the ceramic substrate which enables the production of compact modules with 3‐D wiring.…”

Section: Introductionmentioning

confidence: 99%

“…3,4 The LTCC technology is capable to deliver better performance, stability, and miniaturization for the microwave devices at a lower cost. [2][3][4][5][6][7] In LTCC technology, passives and metallic interconnects are embedded within the ceramic substrate which enables the production of compact modules with 3-D wiring. The main virtue of this technology lies in the fact that it uses metals with high electrical conductivity such as silver (Ag) for interconnection which reduces the conductor loss substantially resulting in improved performance of the microwave module.…”

Section: Introductionmentioning

confidence: 99%

Facile Synthesis of “Quench‐Free Glass” and Ceramic‐Glass Composite for LTCC Applications

et al. 2013

View full text Add to dashboard Cite

The 10 mol% ZnO-2 mol% B 2 O 3 -8 mol% P 2 O 5 -80 mol% TeO 2 (ZBPT) glass was prepared by quenching as well as slowly cooling the melt. The ZBPT glass prepared by both methods show similar microwave dielectric properties. ZBPT glass has an e r of 22.5 (at 7 GHz), Q u 3 f of 1500 GHz, and τ f of À100 ppm/°C. The ceramic-glass composites of Sr 2 ZnTeO 6 (SZT) and ZBPT is prepared through two convenient methods: (a) conventional way of co-firing the ceramic with ZBPT glass powder and (b) a nonconventional facile route by co-firing the ceramic with precursor oxide mixture of ZBPT glass at 950°C. In the former route, SZT + 5 wt% ZBPT composite sintered at 950°C showed moderately good microwave dielectric properties (e r = 13.4, Q u 3 f = 4500 GHz and τ f = À52 ppm/°C). Although the SZT + 5 wt% ZBPT composite prepared through the nonconventional method also showed similar microwave dielectric properties (e r = 13.8, Q u 3 f = 5300 GHz and τ f = À50 ppm/°C), the synthesis procedure is much simplified in the latter case. The composites are found to be chemically compatible with Ag. The composite containing 5 wt% ZBPT prepared through conventional and nonconventional ways shows linear coefficients of thermal expansion of 7.0 ppm/°C and 7.1 ppm/°C, respectively. Both the composites have a room-temperature thermal conductivity of 2.1 Wm À1 K À1.

show abstract