Low SiO2/Si interface state density for low temperature oxides prepared by electron cyclotron resonance oxygen plasma

Kang, Moon Sang

doi:10.1016/j.jnoncrysol.2003.08.044

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…taken on the n-and p-type Si substrates, respectively. Here, the amplitudes of AC voltages V 1 and V 2 were equally set at 1 V. The modulation frequency ω 1 /2π was set at 300 kHz or 1 MHz, the latter of which was used as the high-frequency condition, being typical in the conventional C-V measurements, 20,[35][36][37] while the former one was chosen to be close to the resonant frequency ω 0 of the cantilever. Another modulation frequency ω 2 /2π was set at ω 1 /2π +200 Hz, meaning that ω d /2π was 200 Hz.…”

Section: Estimation Of Area S Of Capacitormentioning

confidence: 99%

Quantitative capacitance measurements in frequency modulation electrostatic force microscopy

Fukuzawa¹,

Liang²,

Shigekawa³

et al. 2022

Jpn. J. Appl. Phys.

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We have proposed a method for quantitative capacitance measurements using frequency modulation electrostatic force microscopy (EFM) with a dual bias modulation method and demonstrated it on n- and p-type Si samples. First, we theoretically derived a conversion formula from a frequency shift of cantilever resonance in EFM into a capacitance value based on the parallel plate capacitor model, by which a pair of an EFM tip and a semiconductor sample is expected to be equivalently represented. Then the capacitance measurements were experimentally conducted on the n- and p-type Si substrates, and the acquired capacitance-voltage curves indicated that the obtained capacitance values were consistent with the expected ones and that the carrier densities evaluated from the depletion capacitances were also in good agreement with those evaluated by the conventional Hall effect measurements. From those results, the validity of our quantitative evaluation method has been well confirmed.

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Section: Estimation Of Area S Of Capacitormentioning

confidence: 99%

Quantitative capacitance measurements in frequency modulation electrostatic force microscopy

Fukuzawa¹,

Liang²,

Shigekawa³

et al. 2022

Jpn. J. Appl. Phys.

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“…The interface‐states density ( D ) of a metal‐insulator‐semiconductor (MIS) structure or metal‐oxide‐semiconductor (MOS) one is an important parameter that changes the behaviors of all devices . There exist interfacial states in hetero‐structures, and there are also many ways to create or decreases the density of interface states . The higher density of interfacial states is, the greater leak currents and noise is, and all of these results in the decrease of reliability, stability, and life of device .…”

Section: Introductionmentioning

confidence: 99%

Prediction of the density of interfacial state produced by radiation in NMOS

Changshi

Feng

2013

Int J Numerical Modelling

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This paper is aimed at the description of the mathematical relationships between energy position in the band gap and the density of interfacial state in N-type metal-oxide-semiconductor (NMOS) capacitor irradiated by 60 Co. Substantial differences of density of interfacial state caused by physical environment are observed. On the basis of non-linear curve fitting, a typical numerical method is used to quantitatively analyze the energy-dependent density of interfacial state. The simulations agree very well with the observed spectra (density of interfacial state versus the energy position in the band gap). The minimum correlation coefficient between the actual data and calculated one is 0.953. The average relative errors between the measured and modeled quantities do not exceed 6.32% in all considered cases. To my knowledge, it is the first time that the density of interfacial state can be predicted via energy level in the full range of band gap.

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An analytic model to describe the relationship between conductance and frequency of heterojunction

Changshi¹

2015

J. Semicond.

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The admittance measurements of a hetero-junction can be used to derive the density of the interfacial state in the hetero-junction. Hence, prediction conductance via frequency is very useful for comprehension of the admittance of a hetero-junction using a mathematical strategy. From the observations on the curve of the frequencydependent conductance of the hetero-junction an analytic model with four-parameters was developed that relates conductance to frequency; the theoretical results agree quite well with the experimental data. The model shows potential for a variety of applications including different electronic devices. The model is a practical tool that can be readily used for assessing the electronic behaviors of a hetero-junction and is scientifically justifiable. In addition, the mathematical bridge to link the density of the interfacial state of the (pyronine-B)/p-Si structure to energy implies a good route to discuses the density of the interfacial state of interfaces.

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Low SiO2/Si interface state density for low temperature oxides prepared by electron cyclotron resonance oxygen plasma

Cited by 3 publications

References 11 publications

Quantitative capacitance measurements in frequency modulation electrostatic force microscopy

Quantitative capacitance measurements in frequency modulation electrostatic force microscopy

Prediction of the density of interfacial state produced by radiation in NMOS

An analytic model to describe the relationship between conductance and frequency of heterojunction

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