Low Specific Contact Resistance of Gallium Zinc Oxide Prepared by Atomic Layer Deposition Contact on ${\rm p}^{+}\hbox{-}{\rm GaAs}$ for High-Speed Near-Infrared Light-Emitting Diode Applications

Chen, Shang‐Fu; Syu, He-Long; Liao, Chien-Lan; Chang, Yu-Teng; Huang, Chi-Chen; Ho, Chong-Lung; Wu, Meng‐Chyi

doi:10.1109/led.2013.2263296

Cited by 9 publications

(13 citation statements)

References 9 publications

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“…For the purpose of high frequency modulation, the NIR LED structure is designed and fabricated as the same to that reported previously [6]. To achieve the current spreading from the top contact over the defined region, a contact of transparent conducting oxide GZO film was deposited by thermal-mode ALD [8].…”

Section: Methodsmentioning

confidence: 99%

“…Gallium-doped zinc oxide (GZO) has recently become very popular as a transparent contact material for LEDs. We have previously reported the low specific contact resistance characterized using a circular transmission line model (CTLM) of 1.7 × 10 −5 -cm 2 of GZO contact prepared by atomic layer deposition (ALD) on p + -GaAs for high-speed NIR LEDs [6]. In addition, the GZO film exhibits a sheet resistance of 7.8 / which is lower than the Indium Tin Oxide (ITO) film of 11.8 / [7].…”

Section: High-frequency Modulation Of Gaas/algaas Leds Using Ga-dopedmentioning

confidence: 99%

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High-Frequency Modulation of GaAs/AlGaAs LEDs Using Ga-Doped ZnO Current Spreading Layers

Chen

Syu

Huang

et al. 2014

IEEE Electron Device Lett.

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In this letter, we report the high-frequency modulation of GaAs/AlGaAs near-infrared (NIR) light-emitting diodes (LEDs) with gallium-doped zinc oxide (GZO) prepared by atomic layer deposition as a current spreading layer. This report analyzes the effects of aperture area of the NIR LEDs on minority carrier lifetime and further investigates the required injection current to achieve the 3-dB frequency bandwidth of 100 MHz. At the same injection current density, the LEDs with different aperture areas always exhibit the same minority carrier lifetime, which is inversely proportional to the square root of current density. It means that the GZO layer plays a good current spreading in the lateral direction from the ohmic contact of NIR LEDs, which shows the lower contact resistance and lower forward voltage.Index Terms-GaAs, LEDs, atomic layer deposition (ALD), gallium-doped ZnO (GZO), minority carrier lifetime, 3-dB modulation bandwidth.

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Section: Methodsmentioning

confidence: 99%

Section: High-frequency Modulation Of Gaas/algaas Leds Using Ga-dopedmentioning

confidence: 99%

High-Frequency Modulation of GaAs/AlGaAs LEDs Using Ga-Doped ZnO Current Spreading Layers

Chen

Syu

Huang

et al. 2014

IEEE Electron Device Lett.

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“…In this Letter, we demonstrate GaN‐based VLC LED with hollow‐runway active area, hollow‐runway current‐confined aperture structure, and ITO/graphene composite conductive layer which has an extremely high optical power (~48.65 mW) and an extremely f −3 dB (~89.2 MHz) at 50 mA. Compared with other VLC device in References , it makes the f −3 dB and optical power to the more optimization extent, which makes VLC possible to enter the Light Fidelity (LiFi) era. We also demonstrate an integrated LiFi device with a communication module using our LEDs and a lighting module consisting of rectangle LEDs.…”

Section: Introductionmentioning

confidence: 97%

“…It has the advantages of high power, no radio spectrum, no electromagnetic interference, no electromagnetic radiation, energy savings, and so on. It can simultaneously realize dual functions of lighting and communication . However, the modulation bandwidth of the traditional LED is only several MHz .…”

Section: Introductionmentioning

confidence: 99%

“…Visible-light communication (VLC) is a new wireless optical communication technology based on white-light lightemitting diodes (LEDs). [1][2][3] It has the advantages of high power, no radio spectrum, no electromagnetic interference, no electromagnetic radiation, energy savings, and so on. It can simultaneously realize dual functions of lighting and communication.…”

Section: Introductionmentioning

confidence: 99%

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Improving modulation bandwidth and optical power of GaN‐based blue LED by hollow‐runway active area

Huang

2020

Micro & Optical Tech Letters

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We demonstrate a higher‐bandwidth and optical power GaN‐based blue light‐emitting diode for visible‐light communication applications. By using a hollow‐runway active area and hollow‐runway current‐confined aperture structure, we obtain an electrical‐to‐optical (E‐O) 3 dB bandwidth (f−3 dB) significantly higher than that of a rectangle‐structure LED with the same epitaxial structure and area of active area. Meanwhile, its optical power can reach 48.65 mW, even higher than a rectangle‐structure LED (45.33 mW). Eight hollow‐runway LEDs connected in series are called hollow‐runway‐chip‐array LEDs (HRCA‐LEDs) and eight rectangle‐structure LEDs connected in series are called rectangle‐chip‐array LEDs (RCA‐LEDs), and they are fabricated into a new device on the same substrate. The f−3 dB and the optical power of the device are ~98.5 MHz and ~712.3 mW, respectively, at 50 mA. HRCA‐LEDs are used as communication module that can provide data transmission and lighting and RCA‐LEDs as a lighting module for enhancing the overall lighting capability of the device. Its luminous flux is 203.57 lm and efficacy is 87.00 lm/W at 50 mA.

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The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction

Kim

et al. 2016

ACS Appl. Mater. Interfaces

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We demonstrate the contact resistance reduction for III-V semiconductor-based electrical and optical devices using the interfacial dipole effect of ultrathin double interlayers in a metal-interlayers-semiconductor (M-I-S) structure. An M-I-S structure blocks metal-induced gap states (MIGS) to a sufficient degree to alleviate Fermi level pinning caused by MIGS, resulting in contact resistance reduction. In addition, the ZnO/TiO interlayers of an M-I-S structure induce an interfacial dipole effect that produces Schottky barrier height (Φ) reduction, which reduces the specific contact resistivity (ρ) of the metal/n-type III-V semiconductor contact. As a result, the Ti/ZnO(0.5 nm)/TiO(0.5 nm)/n-GaAs metal-double interlayers-semiconductor (M-DI-S) structure achieved a ρ of 2.51 × 10 Ω·cm, which exhibited an ∼42 000× reduction and an ∼40× reduction compared to the Ti/n-GaAs metal-semiconductor (M-S) contact and the Ti/TiO(0.5 nm)/n-GaAs M-I-S structure, respectively. The interfacial dipole at the ZnO/TiO interface was determined to be approximately -0.104 eV, which induced a decrease in the effective work function of Ti and, therefore, reduced Φ. X-ray photoelectron spectroscopy analysis of the M-DI-S structure also confirmed the existence of the interfacial dipole. On the basis of these results, the M-DI-S structure offers a promising nonalloyed Ohmic contact scheme for the development of III-V semiconductor-based applications.

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Low Specific Contact Resistance of Gallium Zinc Oxide Prepared by Atomic Layer Deposition Contact on ${\rm p}^{+}\hbox{-}{\rm GaAs}$ for High-Speed Near-Infrared Light-Emitting Diode Applications

Cited by 9 publications

References 9 publications

High-Frequency Modulation of GaAs/AlGaAs LEDs Using Ga-Doped ZnO Current Spreading Layers

High-Frequency Modulation of GaAs/AlGaAs LEDs Using Ga-Doped ZnO Current Spreading Layers

Improving modulation bandwidth and optical power of GaN‐based blue LED by hollow‐runway active area

The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction

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