Low specific contact resistance Ti∕Au contacts on ZnO

Chen, J.-J.; Jang, Soohwan; Anderson, Travis J.; Ren, F.; Li, Yuanjie; Kim, Hyun-Sik; Gila, B. P.; Norton, D. P.; Pearton, S. J.

doi:10.1063/1.2187576

Cited by 32 publications

(9 citation statements)

References 15 publications

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“…[8][9][10] To progress further in fabricating a ZnO-based optical-electronic device, robust stable p-type ZnO is highly demanded during fabrication processes, especially under thermal treatment. [8][9][10] To progress further in fabricating a ZnO-based optical-electronic device, robust stable p-type ZnO is highly demanded during fabrication processes, especially under thermal treatment.…”

Section: Introductionmentioning

confidence: 99%

Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

Shan

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inThermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition Electrical and optical studies of metal organic chemical vapor deposition grown N-doped ZnO filmsThe erratic p-type conductivity in nitrogen-doped ZnO film is still under investigation and has been debated up to now. In this study, the authors have studied the effect of rapid thermal process ͑RTP͒ on the properties of N-doped ZnO films grown by metal-organic chemical vapor deposition. Hall-effect measurements show that the sample is of p-type as the RTP temperature is lower than 350°C while, as the RTP temperature increased up to 550°C or higher, the conduction-type of the sample changed to be n-type. Correspondingly, obvious D and G peaks, which are related to graphite clusters, are observed to increase their intensity with RTP temperature, indicating that interstitial or substitutional carbon atoms may migrate to form carbon clusters in the grain boundary during RTP. RTP is also found to lead to significant changes on the photoluminescence of the samples, with enhanced visible emissions observed as RTP temperature increased. Similar changes are observed on the intensity ratios of the D over G peaks and the visible emission around 600 nm over the near-band-edge emission. This indicates that besides zinc vacancy ͑V Zn ͒ and oxygen vacancy ͑V O ͒, which are popularly ascribed as the origins of the visible emissions around 500 and 550 nm, carbon clusters may be a possible origin of the visible emission around 600 nm. Finally, carbon clusters formed in the grain boundary are also supposed to at least partly be responsible for the type transition caused by RTP.

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Section: Introductionmentioning

confidence: 99%

Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

Shan

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…This result reveals that upon the thermal evaporation of the ZnS/Ge powders at 1000-1100°C, the upper limit of O 2 in Ar for the growth of Zn 2 GeO 4 NWs is below 1%. Because the formation enthalpy of GeO 2 , Ϫ132.2 kcal/mol, 16,17 is greater than that of Zn 2 GeO 4 , Ϫ5.5 kcal/mol, 10 and that of ZnO, Ϫ83 kcal/mol, 17,18 the higher oxygen partial pressure favors the growth of GeO 2 .…”

Section: Growth Of Zn 2 Geo 4 Nws In Ar and Ar/o 2 (1-3%mentioning

confidence: 99%

Growth of Zn[sub 2]GeO[sub 4] and Cu-Doped Zn[sub 2]GeO[sub 4] Nanowires by Thermal Evaporation

Hung

Chang

et al. 2010

J. Electrochem. Soc.

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The effects of oxygen partial pressure and a Cu catalyst on the growth of Zn2GeO4 nanowires (NWs) on Si substrates by thermal evaporation of ZnS and Ge powders at 1000–1100°C in Ar were studied. The Zn2GeO4 NWs could grow on the bare Si substrates at 650–800°C in Ar, while a deposited Cu layer further enhanced their growth, forming the Cu-doped Zn2GeO4 NWs. The growth of both the Zn2GeO4 and Cu-doped Zn2GeO4 NWs followed the self-catalyzed vapor–liquid–solid process. In Ar/normalO2(3%) , GeO2 nanoparticles instead of Zn2GeO4 NWs predominantly formed on the Si substrates, revealing that the higher oxygen partial pressure in Ar enhanced the growth of GeO2 . The green emission peak of Cu-doped Zn2GeO4 NWs showed a blueshift of about 25 nm relative to that of the undoped Zn2GeO4 NWs.

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“…Conversely, the formation of oxygen vacancies near the ZnO surface can increase carrier concentration and lower specific contact resistance [19]. The TiO 2 /ZnO heterojunction is also of great importance for dye sensitised solar cells, [20,21], photocatalysis [22][23][24], watersplitting and self-cleaning coatings [25].…”

Section: Introductionmentioning

confidence: 99%

XPS investigation of titanium contact formation to ZnO nanowires

et al. 2017

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Ti is often used to form an initial Ohmic interface between ZnO and Au due to its low work function, and the TiO/ZnO heterojunction is also of great importance for many practical applications of nanoparticles. Here, Ti has been controllably deposited onto hydrothermally grown ZnO nanowires and the formation of metal-semiconductor contact has been investigated using x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy and scanning electron microscopy. XPS results showed that that the Ti initially reacts with surface oxygen species to form TiO, and further deposition results in the formation of oxides with oxidation state numbers lower than four, and eventually metallic Ti on top of the TiO. The formation of TiC was also observed. XPS showed that the onset of metallic Ti coincided with a Zn 3p core level shift to lower binding energy, indicating upwards band bending and the formation of a rectifying contact. Annealing caused a near-complete conversion of the metallic Ti to TiO and caused the Zn 3p to shift back to its original higher binding energy, resulting in downwards band bending and a more Ohmic contact. PL measurements showed that the optical properties of the nanowires are not affected by the contact formation.

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Low specific contact resistance Ti∕Au contacts on ZnO

Cited by 32 publications

References 15 publications

Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

Growth of Zn[sub 2]GeO[sub 4] and Cu-Doped Zn[sub 2]GeO[sub 4] Nanowires by Thermal Evaporation

XPS investigation of titanium contact formation to ZnO nanowires

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