25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 2003
DOI: 10.1109/gaas.2003.1252417
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Low standby leakage current power amplifier module made with junction PHEMT technology

N. Saka1,
M. Nakamura2,
M. Shimada3
et al.
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Cited by 5 publications
(1 citation statement)
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“…The device also enjoys a low channel resistance and comparatively very low standby leakage current, in the order of micro amps. Both characteristics improve the power efficiency performance of the amplifier with reported compressed-mode efficiency levels of up to 65% [17][18]. The success of the JPHEMT device in high power handset antenna switch applications [18] has allowed for the integration of high performance switches onto the same PA die.…”
Section: A Device Designmentioning
confidence: 98%

An Ultra-Wideband Digitally Programmable Power Amplifier With Efficiency Enhancement for Cellular and Emerging Wireless Communication Standards

Albasha
1
,
Clifton2,
Jingu
3
et al. 2016
IEEE Trans. Circuits Syst. I
15
0
3
0
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“…The device also enjoys a low channel resistance and comparatively very low standby leakage current, in the order of micro amps. Both characteristics improve the power efficiency performance of the amplifier with reported compressed-mode efficiency levels of up to 65% [17][18]. The success of the JPHEMT device in high power handset antenna switch applications [18] has allowed for the integration of high performance switches onto the same PA die.…”
Section: A Device Designmentioning
confidence: 98%

An Ultra-Wideband Digitally Programmable Power Amplifier With Efficiency Enhancement for Cellular and Emerging Wireless Communication Standards

Albasha
1
,
Clifton2,
Jingu
3
et al. 2016
IEEE Trans. Circuits Syst. I
15
0
3
0
View full textAdd to dashboardCite

A Switch-Type Power Amplifier and Its Application to a CDMA Cellphone

Kawakami
1
,
Kusunoki
2
,
Kobayashi
3
et al. 2006
2006 European Microwave Conference
5
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High-efficiency enhancement-mode power heterojunction FET with buried p/sup +/-GaAs gate structure for low-voltage-operated mobile applications

Bito
1
,
Yamakawa
2
,
Tanaka
3
et al. 2006
IEEE Electron Device Lett.
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