Low-temperature (150 °C) activation of Ar+O₂+H₂-sputtered In–Ga–Zn–O for thin-film transistors

Abstract

In–Ga–Zn–O (IGZO) sputtering in an Ar, O2, and H2 atmosphere followed by annealing represents an effective method for defect reduction of the resulting films. The carrier density of Ar+O2+H2-sputtered IGZO films increases with increasing H2 amount during sputtering; however, we found that the increased carrier density was markedly decreased by annealing even at 150 °C. The Ar+O2+H2-sputtered IGZO was used as the active channel in thin-film transistors (TFTs), which led to markedly improved electrical properties after annealing at 150 °C, compared with those obtained using conventional Ar+O2-sputtered films. The proposed method is very promising for low-temperature-processed oxide TFTs.

P‐12: Activation of IGZO Devices at 150°C via Reduction Process Using Hydrogen Gas During Sputtering

“…The radius of the Schottky contact was 100 μm for Schottky diodes, and L of 10 μm and W of 100 μm for MES-FETs. The detailed fabrication process of the devices appears elsewhere [14][15][16][17]. To investigate the electronic states in IGZO:H films, hard X-ray photoelectron spectroscopy (HAXPES) analysis with an excitation X-ray energy of 7940 eV was performed.…”

7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization

“…Furthermore, Aman and Magari et al reported that hydrogen in hydrogenated IGZO acts as a carrier suppressor through annealing by forming metal-hydrogen (M-H) bonds when hydrogen was intentionally added during IGZO deposition. 12,13) In this presentation, we propose a hydrogenated polycrystalline IGO (poly-IGO:H) for use in a channel material of the TFTs. An intentionally doped hydrogen in IGO:H film suppressed the crystallization during the film deposition.…”

Influences of Oxygen Plasma Posttreatment on Electrical Characteristics of Amorphous Indium–Gallium–Zinc–Oxide Thin‐Film Transistors

“…[1][2][3][4][5][6][7][8] a-IGZO TFTs have recently been manufactured using various methods, including physical vapor deposition (PVD), [9][10][11][12] chemical vapor deposition, [13][14][15][16] spin-on-glass, and electroplating. [17][18][19][20] Among these, the sputtering deposition used in PVD has a high commercial potential for mass production because of the benefits of a high deposition rate, a low substrate temperature, and relatively easy thin-film composition control. [21][22][23] As the size and resolution of activematrix displays increase, oxide-based TFTs with faster reaction speeds are required.…”