Low temperature (∼400 °C) growth of polycrystalline diamond films in the microwave plasma of CO/H2 and CO/H2/Ar systems

Abstract

Articles you may be interested inReal time spectroellipsometry for optimization of diamond film growth by microwave plasmaenhanced chemical vapor deposition from CO/H2 mixtures Flattened diamond crystals synthesized by microwave plasma chemical vapor deposition in a COH2 systemThe role of hydrogen in diamond synthesis using a microwave plasma in a CO/H2 system In order to elucidate the growth conditions for pure diamond of good crystallinity, the correlation of the properties of deposited films and gas phase species in microwave plasma of CO/H2 and CO/H2 / Ar systems was investigated through film characterization and optical emission spectroscopic measurements. It was found that the increase of gas phase atomic hydrogen and the suppression of gas phase acetylene were effective for the growth of pure diamond of good crystallinity. Low temperature growth was proposed to realize these growth conditions. It was confirmed that diamond films with good crystallinity and optical transparency could be synthesized at 410 °C (diamond film growth was possible even at 365°C). The growth rate was accelerated in a CO/H 2 / Ar system (0.33 J-lm/h at 410 °C), which was several times faster than that obtained in a CO/H2 system (0.14 J-lm/h at 450°C).

Review of advances in diamond thin film synthesis

“…Oxygen (in the form of CO, O 2 , or alcohol) to the CVD reaction gases has not only a beneficial effect on the growth rate and quality of the diamond films but also allows low-temperature diamond growth [ 109 ]. It was found that oxygen has only a minor effect on the mole fractions of radical species such as H and CH 3 [ 110 ].…”