Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition

Nakajima, Yoshiki; Murata, Hiromasa; Saitoh, Noriyuki; Yoshizawa, Noriko; Suemasu, Takashi; Toko, Kaoru

doi:10.1021/acsomega.9b00420

Cited by 20 publications

(14 citation statements)

References 25 publications

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“…To improve efficiency these factors are essential for research into high power and energy as well as overall super-capacity improvements [186,187]. Around most of these 3D graphene buildings showed outstanding electrochemical behavior for energy storage and other functional properties such as physical and catalytic [188]. Innumerable production techniques for preparing supercapacitor electrodes based on 3D graphene have been verified.…”

Section: Transition Metal Oxides-graphene Compositesmentioning

confidence: 98%

A review on graphene based transition metal oxide composites and its application towards supercapacitor electrodes

Hussain

Ihrar

et al. 2020

SN Appl. Sci.

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Two-dimensional (2D) graphene and its outstanding properties such as, enormous conductivities, mechanical strength, optical and electrical properties brought it one of the most studied materials for the production of energy using renewable resources. The composites of graphene with the same morphological materials such as layered transition metal oxides will be the most aspiring combination to boost their conducting, optoelectronic and mechanical properties. Furthermore, the transition metal chalcogenides materials attracted significant attention due to their atomically thin layers and enormous optical, conducting and electrical properties. The layered materials offer mostly atomically thin 2D plane to the charge carrier with superior conducting properties. The thickness at atomic level, band gap, spin orbit coupling electronic and optoelectronics properties of transition metal dichalcogenides makes them one of the promising entities in energy harvesting technologies. The review suggests some strategies to improve the transition metals-composites stability conducting properties to be tailored in various applications.

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Section: Transition Metal Oxides-graphene Compositesmentioning

confidence: 98%

A review on graphene based transition metal oxide composites and its application towards supercapacitor electrodes

Hussain

Ihrar

et al. 2020

SN Appl. Sci.

View full text Add to dashboard Cite

show abstract

“…Most studies on the application of CdS films as buffer layers explain the physical properties at substrate temperatures below 300 °C. However, the characteristics of the devices may be determined based on the characteristics of CdS films exhibited at substrate temperatures above 300 °C when the CdS film is applied as a junction layer for electronic devices other than the buffer layer of solar cells [ 16 , 17 , 18 ]. Therefore, further research on the physical properties of CdS thin films over a wide range of substrate temperatures is required.…”

Section: Introductionmentioning

confidence: 99%

Variations in the Physical Properties of RF-Sputtered CdS Thin Films Observed at Substrate Temperatures Ranging from 25 °C to 500 °C

et al. 2022

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CdS films with a wide range of substrate temperatures as deposition parameters were fabricated on Corning Eagle 2000 glass substrates using RF magnetron sputtering. The crystallographic structure, microscopic surface texture, and stoichiometric and optical properties of each CdS film deposited at various substrate temperatures were observed to be highly temperature-dependent. The grown CdS thin films revealed a polycrystalline structure in which a cubic phase was mixed based on a hexagonal wurtzite phase. The relative intensity of the H(002)/C(111) peak, which represents the direction of the preferential growth plane, enhanced as the temperatures climbed from 25 °C to 350 °C. On the contrary, the intensity of the main growth peak at the higher temperatures of 450 °C and 500 °C was significantly reduced and exhibited amorphous-like behavior. The sharp absorption edge revealed in the transmission spectrum shifted from the long wavelength to the short wavelength region with the rise in the substrate temperature. The bandgap showed a tendency to widen from 2.38 eV to 2.97 eV when the temperatures increased from 25 °C to 350 °C. The CdS films grown at the temperatures of 450 °C and 500 °C exhibited glass-like transmittance with almost no interference fringes of light, which resulted in wide bandgap values of 3.09 eV and 4.19 eV, respectively.

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“…For example, Nakajima et al realized the preparation of multilayer graphene at 400 °C on the Ni surface by using amorphous carbon sputtered on an Ni surface as a carbon resource. 48 Moreover, the proper size and thickness of droplet Ni is beneficial to the synthesis of monolayer graphene domains. 49 It was also found that graphene growth could break through the limitation of edges of Ni droplets, forming a continuous monolayer graphene film over discontinuous Ni droplets.…”

Section: Surface Engineering Of Catalytic Substrates For Graphene Growthmentioning

confidence: 99%

Surface Engineering of Substrates for Chemical Vapor Deposition Growth of Graphene and Applications in Electronic and Spintronic Devices

Xue

Wang

2021

Chem. Mater.

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Controllable synthesis of large-scale and high-quality graphene film is a basis for development of electronic and spintronic devices. Chemical vapor deposition (CVD) has been considered as a potential method for the industrialized preparation of high-quality graphene. The substrate in CVD is used to support graphene and even help graphene grow. Different substrates may lead to different graphene growth results. Therefore, it is of great importance to select appropriate substrates and growth strategies. In addition, the performance demands of advanced device also urgently require high-quality CVD-derived graphene supports. In this review, we summarize the current advances in surface engineering on substrates for CVD growth of graphene. Surface engineering involves anisotropic disordered, anisotropic ordered, and isotropic homogeneous surfaces of catalytic substrates, and surfaces of insulating substrates. Meanwhile, we describe how to use different surface engineering techniques to control the orientation of graphene domains, grow large-area single-crystal graphene domains, and regulate graphene layers. This information will provide a reference for the effective selection of substrates. Moreover, we review the current progress of graphene in the fields of charge and spin transport, demonstrating that graphene has broad prospects in the next generation of communications and storage. Finally, the opportunities and challenges in the controllable CVD-derived preparation of graphene and its application are discussed.

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Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition

Cited by 20 publications

References 25 publications

A review on graphene based transition metal oxide composites and its application towards supercapacitor electrodes

A review on graphene based transition metal oxide composites and its application towards supercapacitor electrodes

Variations in the Physical Properties of RF-Sputtered CdS Thin Films Observed at Substrate Temperatures Ranging from 25 °C to 500 °C

Surface Engineering of Substrates for Chemical Vapor Deposition Growth of Graphene and Applications in Electronic and Spintronic Devices

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