Surface Engineering of Substrates for Chemical Vapor Deposition Growth of Graphene and Applications in Electronic and Spintronic Devices

Abstract

Controllable synthesis of large-scale and high-quality graphene film is a basis for development of electronic and spintronic devices. Chemical vapor deposition (CVD) has been considered as a potential method for the industrialized preparation of high-quality graphene. The substrate in CVD is used to support graphene and even help graphene grow. Different substrates may lead to different graphene growth results. Therefore, it is of great importance to select appropriate substrates and growth strategies. In addition, the performance demands of advanced device also urgently require high-quality CVD-derived graphene supports. In this review, we summarize the current advances in surface engineering on substrates for CVD growth of graphene. Surface engineering involves anisotropic disordered, anisotropic ordered, and isotropic homogeneous surfaces of catalytic substrates, and surfaces of insulating substrates. Meanwhile, we describe how to use different surface engineering techniques to control the orientation of graphene domains, grow large-area single-crystal graphene domains, and regulate graphene layers. This information will provide a reference for the effective selection of substrates. Moreover, we review the current progress of graphene in the fields of charge and spin transport, demonstrating that graphene has broad prospects in the next generation of communications and storage. Finally, the opportunities and challenges in the controllable CVD-derived preparation of graphene and its application are discussed.

Applications of Graphene in Five Senses, Nervous System, and Artificial Muscles

“…Graphene can be divided into several types according to their morphologies and dimensions, such as 0D quantum dots, − 1D nanoribbons, − nanosheets, − flakes, , 2D films, − and 3D macroforms. − The 0D quantum dots can be used in fluorescence imaging and light emission devices. The 1D nanoribbon provides a platform for topological insulators , and Dirac physics .…”

Recent advances in the controlled chemical vapor deposition growth of bilayer 2D single crystals

“…29 For example, numerous studies exhibited that this method has the advantages of controllable thickness, stacked structure, twist angle, scaled synthesis, etc., strongly relying on the flexible modulation of the growth parameters such as growth temperature, gas flow and growth duration. [30][31][32] Based on these merits, in recent years, the quality and size of bilayer 2D single crystals have greatly improved. Therefore, in this section, we review the progress of the well-controllable synthesis of bilayer graphene, h-BN and TMDs, which is based on the modulation of the growth conditions.…”

Optimization of Graphene Layers Grown on Pt/Ti/SiO2 by Hot Filament Chemical Vapor Deposition

“…[18] Platinum is chemically inert, has high resistance to oxidation, and is feasible to be integrated into the complementary metal-oxide semiconductor processes. [19,20] Several groups have reported the growth of graphene without any catalyst besides platinum, [21][22][23][24] while other researchers claim that the Cu-assisted growth is necessary to produce few-layer graphene. [19,[25][26][27][28][29] Graphene grown on platinum films over a SiO 2 substrate has the advantage of smooth surfaces due to bigger grain size and process robustness because of the higher melting point of platinum versus copper (1768 °C vs 1083 °C) resulting in less grain boundaries and surface roughness that would yield a larger area of graphene crystals.…”

“…[ 18 ] Platinum is chemically inert, has high resistance to oxidation, and is feasible to be integrated into the complementary metal‐oxide semiconductor processes. [ 19,20 ] Several groups have reported the growth of graphene without any catalyst besides platinum, [ 21–24 ] while other researchers claim that the Cu‐assisted growth is necessary to produce few‐layer graphene. [ 19,25–29 ]…”