Low-temperature characteristics of resistive switching memory devices based on reduced graphene oxide-phosphor composites toward reliable cryogenic electronic devices

Unconventional Memristive Nanodevices

“…In [34], a resistive switching memristor was manufactured and characterized based on reduced Graphene Oxide (rGO) and Phosphor composites, aiming for a reliable cryogenic electronic device. Two memory structures were explored and compared: an all-oxide IT O/GP/IT O/quartz device and (ii) an IT O/GP/Si3N 4/p ++ Si device.…”