Low Temperature Chemical Vapor Deposition of Boron Doped Silicon Films

Hall, L.H.; Koliwad, K. M.

doi:10.1149/1.2403279

Cited by 29 publications

(14 citation statements)

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“…Concerning the resistivity, Ap/p(x) is 40 %, 60 %%, 55 % and 20000 % for the same pressures. Secondly, as mentionned by several authors who have studied the incorporation of boron in polysilicon with the couple of gas @2&,S@), we observe that the growth rate of boron doped films is higher than those of undoped f k s [7,8]. This exaltation effect of diborane seems to be quite dependent on the total pressure since the variation of V, with TO is strongly different in all cases.…”

Section: Boron Doping For P-type Polysilicon Layerssupporting

confidence: 65%

Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers

et al. 1995

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: We report in-situ doping of polysilicon grown on glass substrates by a LPCVD process. The growth rate, the resistivity and the dopant concentration of boron in-situ doped polysilicon layers are studied as a function of the deposition pressure and the dopant gas to silane mole ratio. A dependence of the axial uniformity on pressure and B2H6/S1H4 mole ratio is put forward, and this effect appears to be very strong especially at high pressure. It is explained by a lowering of the diborane concentration in the gas mixture along the load, because of a different threshold for the thermal decomposition of diborane and silane. It is also put forward that a critical concentration of boron exists above which the growth rate is increasing. Improvements of the horizontal homogeneity are obtained by varying the total gas flow rate.

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Section: Boron Doping For P-type Polysilicon Layerssupporting

confidence: 65%

Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers

et al. 1995

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“…107 This is likely due to catalyzed decomposition of the semiconductor precursor with B 2 H 6 , an effect well known in the deposition of Si thin lms. 108 A similar nding reported by Tutuc et al was that a conformal P-rich shell can be present for Ge nanowires grown with PH 3 . 109 In contrast, in situ Si nanowire doping by PH 3 and B 2 H 6 with minimal disturbance to the growth rate and morphology has also been reported with optimized growth conditions.…”

Section: In Situ Doping Of Nanowiressupporting

confidence: 72%

Semiconductor Nanowire Growth and Integration

Chen¹,

Lü²,

Lieber³

2014

Semiconductor Nanowires

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Semiconductor nanowires refer to crystal structures with diameters as small as a few nanometers and lengths up to tens of micrometers or even millimeters. Nanowires can be produced either through conventional subtractive nanofabrication processes, via lithography and etching, or through additive nanomaterial growth methods. The quality of “top-down” fabricated nanowires are in principle determined by the starting material, although the size reduction techniques used to fabricate these structures inevitably introduce damage (e.g., roughness) that can degrade overall quality. The top-down approach, which relies heavily on the precision of the lithography and etching tools, also becomes less cost-effective when scaling to ca. 10 nm size regimes. In this chapter we focus on nanowires produced through “bottom-up” growth methods, in which the critical dimension (e.g. the nanowire diameter) is limited not by lithography precision but controlled during chemical synthesis with atomic resolution. In particular, the catalyst-mediated vapor–liquid–solid (VLS) process is discussed in detail since this approach enables the growth of a broad range of nanowire materials with controlled structure, morphology, composition, and doping.

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“…This temperature dependence of the in-situ doped boron growth rate has been widely studied and reported in the published literature [1][2][3]. This temperature dependence of the in-situ doped boron growth rate has been widely studied and reported in the published literature [1][2][3].…”

Section: Processingmentioning

confidence: 99%

“…Polysilicon growth can be performed by the in-situ low pressure chemical vapor deposition (LPCVD), which offers uniform doping through the entire polysilicon layer [1][2][3]. The main purpose of these vias is to reduce space taken by electrical wiring on the active sensor or device area.…”

Section: Introductionmentioning

confidence: 99%

Through-Wafer Polysilicon Interconnect Fabrication with In-Situ Boron Doping

et al. 2005

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Bulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon material in order to develop fast one-step doping process, without additional diffusion. The via holes can be processed by high-aspect ratio silicon etching with inductively coupled plasma (ICP). Only one deep ICP etching is required if the wafer is mechanically ground (from the backside) to reduce the wafer thickness of 500 microns to a typical of 400, in order to overcome deep etching sidewall profile problems. After hole formation with ICP the via plug fabrication process continues by growing an insulating thermal oxide layer with a thickness of the order of a micron, followed by an in-situ boron doped LPCVD polysilicon growth to fill the holes with sufficient step coverage. The polysilicon growth temperature at 680°C ensures sufficient step coverage, reasonable furnace process time and enables planarization processing, such as grinding and chemical-mechanical polishing (CMP). The subsequent planar processing typically requires planarization of the polysilicon layer down to the original silicon (or oxide) surface with CMP, and some doping activation step, which usually can be performed together with some additional oxidation step. Applications of the via plugs in the field of silicon-based sensors or actuators enable significant reduction of the front surface wiring density, which opens additional space for denser packing or other desired components.

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Low Temperature Chemical Vapor Deposition of Boron Doped Silicon Films

Cited by 29 publications

References 0 publications

Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers

Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers

Semiconductor Nanowire Growth and Integration

Through-Wafer Polysilicon Interconnect Fabrication with In-Situ Boron Doping

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