1999
DOI: 10.1149/1.1390924
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Low Temperature Chemical Vapor Deposition of Titanium Nitride Thin Films with Hydrazine and Tetrakis(dimethylamido)titanium

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Cited by 8 publications
(3 citation statements)
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“…The long-term goal of our research is to explore new nitrogen source compounds that can be used to grow metal nitride phases by chemical vapor deposition techniques. While ammonia is by far the most widely used nitrogen source compound in film growth, the high stability of ammonia and concomitant high film deposition temperatures has led to increasing consideration of alternative nitrogen source compounds in the past several years within the context of GaN and TiN film growth. , Hydrazine and alkylhydrazines have been the focus of most of the effort; however, nitrogen heterocycles such as those described herein are potentially useful source compounds. , …”
Section: Discussionmentioning
confidence: 99%
“…The long-term goal of our research is to explore new nitrogen source compounds that can be used to grow metal nitride phases by chemical vapor deposition techniques. While ammonia is by far the most widely used nitrogen source compound in film growth, the high stability of ammonia and concomitant high film deposition temperatures has led to increasing consideration of alternative nitrogen source compounds in the past several years within the context of GaN and TiN film growth. , Hydrazine and alkylhydrazines have been the focus of most of the effort; however, nitrogen heterocycles such as those described herein are potentially useful source compounds. , …”
Section: Discussionmentioning
confidence: 99%
“…6,7 Physical vapor deposition (PVD) suffers indeed from a poor step coverage and chemical vapor deposition (CVD) requires high temperatures processing. [8][9][10][11][12] Reversely, ALD provides an accurate control of the thickness and it allows to grow highly-conformal layers with a high quality at relatively low temperatures. 13 The surface chemical reaction involved during the ALD process can either be thermally activated by heating the reactor or it can be activated by generating a plasma in the chamber (plasma-enhanced ALD, PE-ALD).…”
mentioning
confidence: 99%
“…The process uses low-temperature cracking of hydrazine to form nitrogen radicals that react with metal-bearing substrates to form nitride films. Also, hydrazine has been used as a precursor along with tetrakis (dimethylamido) titanium (TDMAT) for the low-temperature chemical vapor deposition of TiN thin films between 50 and 200 °C at 10 Torr, with growth rates between 5 and 35 nm/min. , Likewise, a novel hydrazide sol−gel process has been developed to synthesize nanocrystalline titanium nitride, which involves the reaction of titanium isopropoxide with anhydrous hydrazine in the presence of anhydrous acetonitrile to yield a solid precursor. Fully crystallized, single phase TiN is detected by X-ray diffraction at a temperature of 800 °C …”
Section: Introductionmentioning
confidence: 99%