2009
DOI: 10.1016/j.solmat.2008.11.040
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Low-temperature contacts through SixNy-antireflection coatings for inverted a-Si:H/c-Si hetero-contact solar cells

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Cited by 3 publications
(5 citation statements)
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“…(28) and (29), and of the limiting expression f (ω)| =0 = π (A − i B), which follows directly from the definition (25). From Eq.…”
Section: Closed Expression For the Cycle-averaged Powermentioning
confidence: 76%
See 1 more Smart Citation
“…(28) and (29), and of the limiting expression f (ω)| =0 = π (A − i B), which follows directly from the definition (25). From Eq.…”
Section: Closed Expression For the Cycle-averaged Powermentioning
confidence: 76%
“…22 The study of conjugate polymers was boosted with the introduction of laser pulses as an ionizing source. 23,24 TRMC is now being used routinely as a method to determine transient conductivities of a wide variety of materials, such as silicon-based composites for solar cells, [25][26][27][28] compound semiconductors, 29,30 columnar stacked molecular aggregates, [31][32][33][34][35][36][37][38][39] bulk solids or thin films of conjugated polymers, [40][41][42][43][44][45][46][47] and molecular wires in dilute solution.…”
Section: Historical Introductionmentioning
confidence: 99%
“…Some samples of the cross section of screenprinted Ag contact fingers are shown in Fig. In addition, better aspect ratios than with screen printing are possible simply by increasing the plating time [79]. Additional components are organic agents to give the paste the desired viscosity, oxides which act as corrosion agent at elevated temperature and sometimes compounds containing specific doping elements.…”
Section: Metallization and Screen Printingmentioning
confidence: 99%
“…Among the many options, laser ablation of a-Si x N y :H, selective electroless plating of the openings, and local laser-annealing appear to be the solution with the lowest front grid shading and the best maintenance for the electronic passivation of the a-Si x N y :H/c-Si interface [79]. Among the many options, laser ablation of a-Si x N y :H, selective electroless plating of the openings, and local laser-annealing appear to be the solution with the lowest front grid shading and the best maintenance for the electronic passivation of the a-Si x N y :H/c-Si interface [79].…”
Section: A-si:h/c-si Heterocontact Cell With Inverted Geometrymentioning
confidence: 99%
“…Generally, an antireflection coating (ARC) of SiO x , TiO x , and SiN x materials is provided on a semiconductor device surface to reduce surface reflection [1][2][3]. However, in a singlelayer ARC, the light incidence angle and spectral range are limited.…”
Section: Introductionmentioning
confidence: 99%