Low-Temperature Crystallization of Pb(Zr0.4,Ti_0.6)O₃ Thin Films by Chemical Solution Deposition

Abstract

We studied the crystallization of sol-gel derived Pb(Zr0.4Ti0.6)O3 [PZT(40/60)] thin films at 400 down to 390°C on Pt/SiO2/Si substrates by combination of diol-based solutions and modified film preparation processes. It was found that PZT films could be crystallized at 390°C and that PZT films crystallized at 400°C had microstructures with perovskite-single-phase columnar grains and good ferroelectric characteristics such as switched polarization (2 Pr) of 20 μC/cm2 and relative permittivity (εr) of 740. Next, we evaluated annealing temperature dependence of PZT(40/60) thin films crystallized at 390 to 435°C. The results indicated that (111)-orientation of perovskite phases became weaker, (100)-orientation of those became stronger, and the perovskite grain size increased with decreasing in annealing temperature.

Homogeneity issues in chemical solution deposition of Pb(Zr,Ti)O3 thin films

“…[1][2][3][4][5] Various CSD methods are broadly divided into those involving a reaction leading to a heterometallic precursor, such as (organic) sol-gel, or polymeric precursor routes in water-based media or those based on mixing of non-reactive organic compounds, i.e. metalloorganic decomposition (MOD).…”

Fabrication of sub 50-nm direct-patterned Pb(Zr,Ti)O3 films by electron beam-induced metal-organic deposition

“…Drouin et al [2] reported that it was possible to obtain local heating of a platinum silicide film around 300-450°C using a standard scanning electron microscopy (SEM) system. Maki et al [3] and Huang et al [1] also report a low temperature-phase formation of a sol-gel derived PZT film around 400-420°C. Furthermore, electron beam lithography has been considered as a potential alternative to optical lithography for critical level patterning in integrated-circuit manufacturing such as nanoelectromechanical systems (NEMS) and FeRAMs [4,5].…”