2000
DOI: 10.1080/10584580008222258
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Low temperature crystallization of SrBi2Ta2O9 (SBT) films

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Cited by 16 publications
(11 citation statements)
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“…The results indicate that the dominant process is the occupation of the Sr vacancies by the Bi excess, more than the diffusion of the Bi toward the Pt bottom electrode or to the grain boundary. Other authors 22 have shown that SBT compositions with Bi in Sr positions produce a structural distortion of the pseudo-perovskite that results in maximum values of spontaneous and remanent polarizations, P s and P r . But, this also decreases the reaction interface between Pt and Bi.…”
mentioning
confidence: 98%
“…The results indicate that the dominant process is the occupation of the Sr vacancies by the Bi excess, more than the diffusion of the Bi toward the Pt bottom electrode or to the grain boundary. Other authors 22 have shown that SBT compositions with Bi in Sr positions produce a structural distortion of the pseudo-perovskite that results in maximum values of spontaneous and remanent polarizations, P s and P r . But, this also decreases the reaction interface between Pt and Bi.…”
mentioning
confidence: 98%
“…3, and it shows two-step weight losses. [15][16][17][18][19][20] Therefore, the first exotherm (approximately 650°C) appearing in the DTA curve corresponds to the crystallization of the intermediate fluorite phase, while the second exotherm (approximately 780°C) indicates the formation of the Aurivillius phase. From the TGA data the pyrolysis temperature is fixed as 450°C, to obtain the noncrystalline SBT film.…”
Section: Resultsmentioning
confidence: 99%
“…8,9,15 However, the high-temperature processing has been a major limiting factor. Several optimized processes, including the rapid thermal annealing and annealing of SBT thin films under the oxygen flow, have been successful to lower the crystallization temperature to approximately 650°C [16][17][18][19][20] and to improve the properties of SBT thin films as well. Several optimized processes, including the rapid thermal annealing and annealing of SBT thin films under the oxygen flow, have been successful to lower the crystallization temperature to approximately 650°C [16][17][18][19][20] and to improve the properties of SBT thin films as well.…”
Section: Introductionmentioning
confidence: 99%
“…As discussed by Uchiyama et al,9 the suppression of quasi-stable fluorite formation during the heat-up process after the coating was one of the key process factors to obtain the ferroelectric SBT phase, especially for low-temperature processing. This can be achieved by the adoption of rapid thermal annealing ͑RTA͒.…”
mentioning
confidence: 97%
“…1 Among the many candidate ferroelectric materials, the SrBi 2 Ta 2 O 9 ͑SBT͒ thin film appears to be one of the most promising ferroelectric layer materials in the FeRAM due to its excellent reliability properties, such as fatigue and retention endurances, even with conventional Pt electrodes. 2 However, there are three major problems related to SBT material.…”
mentioning
confidence: 99%