Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

Cheng, Gary J.; Wang, Junling; Dechakupt, Tanawadee; Trolier-McKinstry, Susan

doi:10.1063/1.2140071

Cited by 36 publications

(31 citation statements)

References 16 publications

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“…These characteristics were not significantly affected by substrate materials. The dielectric constant obtained here is the highest ever reported for thin BZN films processed at low‐temperature of <200°C or without heat treatment 1,5–12 . This high dielectric constant in the AD‐BZN films was attributed to the nanosized crystallines formed in the films.…”

Section: Resultsmentioning

confidence: 46%

“…Recently, Park and colleagues 1,3–8 and several research groups 9–12 reported the fabrication and characterizations of bismuth–zinc (magnesium)–niobate, pyrochlore phase‐based thin films for embedded capacitor applications. The films showed good dielectric and leakage current performance even when they were fabricated at low‐temperature.…”

Section: Introductionmentioning

confidence: 99%

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High Dielectric Properties of Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films Fabricated at Room Temperature

Ryu

Kim

Choi

et al. 2008

Journal of the American Ceramic Society

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Paraelectric, pyrochlore thin films of Bi1.5Zn1.0Nb1.5O7 were fabricated on platinized silicon and Ni‐plated Cu foil by aerosol deposition at room temperature for embedded capacitor applications. The highly dense films thus obtained showed superior dielectric properties without any heat treatment. The dielectric constant and dielectric loss of tan δ of the films at 100 kHz were over 160 and less 0.05, respectively. Furthermore, the films showed markedly superior capacitance density (>100 nF/cm2) and low leakage current density (10−4–10−7 A/cm2 at 3.0 V). The results demonstrated the promising potential for embedded passive components in printed circuit board applications.

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Section: Resultsmentioning

confidence: 46%

Section: Introductionmentioning

confidence: 99%

High Dielectric Properties of Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films Fabricated at Room Temperature

Ryu

Kim

Choi

et al. 2008

Journal of the American Ceramic Society

View full text Add to dashboard Cite

show abstract

“…But, their dielectric constants are small. Bismuth‐based pyrochlores have relatively large dielectric constant and very low loss tangent . They have been widely studied for film capacitors, high frequency and microwave dielectric applications .…”

Section: Introductionmentioning

confidence: 99%

Bismuth Zinc Niobate Thin Film Multilayer Capacitors with Cu Electrodes Fabricated at Low Temperature by RF Magnetron Sputtering

Ren

Khan

et al. 2016

J. Am. Ceram. Soc.

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Thin film multilayer capacitors (MLCs) composed of amorphous Bi1.5Zn1.0Nb1.5O7 (BZN) dielectric layers with Cu internal electrodes were fabricated by radio‐frequency magnetron sputtering at a temperature below 150°C. Both BZN thin films and Cu internal electrodes were deposited in situ through a set of steel shadow masks at room temperature and postannealed at 150°C. The BZN dielectric layers used in the MLCs are amorphous and the thickness for each BZN layer is approximately 220 nm. Metallic Cu layer used as the internal electrode is about 50 nm thick. Auger electron spectroscopy analysis indicates that there are no diffusion between BZN films and Cu electrodes, as well as no oxidation of Cu electrodes during the fabrication process owing to room‐temperature deposition and low‐temperature postannealing (150°C). The thin film MLCs with different number of BZN layers were fabricated. The thin film MLCs with five BZN layers exhibit promising properties with dielectric constant of 72, capacitance density of 1600 nF/cm2, and loss tangent of 5.4% at 10 kHz. These results suggest that the BZN thin film MLCs have potential applications for the embedded PCBs.

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“…Recently, paraelectric bismuth–zinc (magnesium)–niobate (BZN)–based thin films have attracted interest for embedded capacitor applications because they show a good dielectric constant (150–220) and leakage current performance even when fabricated at a low temperature 5–13 . Furthermore, BZN films show a large electric field dependence of their dielectric permittivity 9–13 .…”

Section: Introductionmentioning

confidence: 99%

Flexible Dielectric Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films on a Cu‐Polyimide Foil

Ryu

Kim

Choi

et al. 2009

Journal of the American Ceramic Society

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Flexible thin films of Bi1.5Zn1.0Nb1.5O7 (BZN) were deposited on a Cu/polyimide (PI) foil by aerosol deposition at room temperature. The BZN film thickness was in the range of 1.2–17.9 μm. Highly dense and nanocrystalline films were obtained without any heat treatment. The dielectric constant and loss of the film at 100 kHz were over 150 and 0.04, respectively. Furthermore, the as‐deposited film showed markedly low leakage current densities of <10−9 A/cm2 at 3.0 V. These reasonably high dielectric properties were due to the nanocrystallinity of the films. The results confirm the significant potential of the BZN films as passive components in flexible printed circuit board applications.

show abstract

Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

Cited by 36 publications

References 16 publications

High Dielectric Properties of Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films Fabricated at Room Temperature

High Dielectric Properties of Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films Fabricated at Room Temperature

Bismuth Zinc Niobate Thin Film Multilayer Capacitors with Cu Electrodes Fabricated at Low Temperature by RF Magnetron Sputtering

Flexible Dielectric Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films on a Cu‐Polyimide Foil

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Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

Cited by 36 publications

References 16 publications

High Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Thin Films Fabricated at Room Temperature

High Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Thin Films Fabricated at Room Temperature

Bismuth Zinc Niobate Thin Film Multilayer Capacitors with Cu Electrodes Fabricated at Low Temperature by RF Magnetron Sputtering

Flexible Dielectric Bi1.5Zn1.0Nb1.5O7 Thin Films on a Cu‐Polyimide Foil

Contact Info

Product

Resources

About

High Dielectric Properties of Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films Fabricated at Room Temperature

High Dielectric Properties of Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films Fabricated at Room Temperature

Flexible Dielectric Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films on a Cu‐Polyimide Foil