“…In addition, Cu as metal interconnect for hybrid bonding can provide excellent electrical resistance, anti-electromigration, and thermal conductivity. However, oxidization of Cu induces a requirement of strict bonding conditions, such as high bonding temperature and high vacuum environment, which causes the problems of thermal budget, structural reliability, wafer warpage for the bonding structures [10]. Therefore, the method to reduce Cu-Cu bonding temperature is important to improve the feasibility of Cu/dielectric hybrid bonding for the applications in 3D IC, involving high bandwidth memory (HBM), quantum compute, fifth-generation mobile networks (5G) and artificial intelligence (AI) chips.…”