Low-Temperature Cu–Cu Direct Bonding Using Pillar–Concave Structure in Advanced 3-D Heterogeneous Integration

Yang, Yutao; Chou, Teh-Ying; Yu, Tung-Hsi; Chang, Yu-Wei; Huang, T. C.; Yang, Kaiming; Ko, Cheng-Ta; Chen, Yuhua; Tseng, Tzyy-Jang; Chen, Kuan‐Neng

doi:10.1109/tcpmt.2017.2720468

Cited by 15 publications

(6 citation statements)

References 14 publications

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“…This review paper also discusses the current development trend and applications of Cu-Cu Fig. 14 (a) Pillar-concave structure used in the future application of heterogeneous integration, (b) enlarged part of (a) with RDL layer linked to pillar-concave structure and TSV, and (c) the Cu pillar and Cu concave bonding process [59] Transactions of the ASME bonding. The implementation of Cu-Cu bonding using techniques described in this review paper could have a promising impact on existing 3D IC and heterogeneous integration.…”

Section: Discussionmentioning

confidence: 99%

“…Also, stability of the Cu/Manganin-Manganin/Cu pad-to-pad-bonded structure was using modified kelvin structure, and reliability assessment of this bonded structure was investigated under multiple current stressing, temperature cycling test, and the results indicate excellent stability without electrical performance degradation 3.4 Concave-Pillar Design. Chen and coworkers recently reported a novel design to achieve low temperature Cu-Cu bonding utilizing pillar and concave on silicon substrate with and without polymer layer [59]. As shown in Fig.…”

Section: Cu-cu Bonding By Texturing Cu Crystal Orientationmentioning

confidence: 99%

“…image of (a) Cu pillar, (b) Cu concave, (c) pillarconcave structure during bonding on silicon with polymer layer, and (d) pillar-concave-bonded structure demonstration on silicon with polymer layer[59] …”

mentioning

confidence: 99%

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Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

Panigrahy

Kuan-Neng

2018

Journal of Electronic Packaging

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Arguably, the integrated circuit (IC) industry has received robust scientific and technological attention due to the ultra-small and extremely fast transistors since past four decades that consents to Moore's law. The introduction of new interconnect materials as well as innovative architectures has aided for large-scale miniaturization of devices, but their contributions were limited. Thus, the focus has shifted toward the development of new integration approaches that reduce the interconnect delays which has been achieved successfully by three-dimensional integrated circuit (3D IC). At this juncture, semiconductor industries utilize Cu–Cu bonding as a key technique for 3D IC integration. This review paper focuses on the key role of low temperature Cu–Cu bonding, renaissance of the low temperature bonding, and current research trends to achieve low temperature Cu–Cu bonding for 3D IC and heterogeneous integration applications.

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Section: Discussionmentioning

confidence: 99%

Section: Cu-cu Bonding By Texturing Cu Crystal Orientationmentioning

confidence: 99%

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Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

Panigrahy

Kuan-Neng

2018

Journal of Electronic Packaging

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“…The binder is deposited either on one or both wafers before the bonding process. Depending on the device application, different types of materials can be used, such as metals (Cu-Cu or Au-Au in thermo-compression bonding [ 4 , 5 ], eutectic bonding [ 6 ]), glasses (glass frit bonding [ 7 , 8 ]), and polymers [ 9 , 10 ]. It is important to recall that the packaging cost of an individual device can reach up to the 70% of the total cost [ 11 ] and therefore wafer-level packaging can significantly save money.…”

Section: Introductionmentioning

confidence: 99%

A New Approach for the Control and Reduction of Warpage and Residual Stresses in Bonded Wafer

et al. 2021

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A geometrical modification on silicon wafers before the bonding process, aimed to decrease (1) the residual stress caused by glass frit bonding, is proposed. Finite element modeling showed that (2) by introducing this modification, the wafer out-of-plane deflection was decreased by 34%. Moreover, (3) fabricated wafers with the proposed geometrical feature demonstrated an improvement for the (4) warpage with respect to the plain wafers. A benefit for curvature variation and overall shape of the (5) bonded wafers was also observed.

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“…However, direct bonding technology is being studied and applied for some device fabrication to replace soldering bonding technology to achieve higher performance packaging. [1][2][3] For Cu/Cu direct bonding, usually, high temperature should be required to achieve good mechanical performance for direct bonding. However, high temperature may cause some problems for some devices, such as performance degeneration and device damage.…”

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confidence: 99%

Study of Cu Film Surface Treatment Using Formic Acid Vapor/Solution for Low Temperature Bonding

Yang

Zhou

et al. 2017

J. Electrochem. Soc.

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In this paper, the surface of Cu film was treated with formic acid vapor and solution for Cu low temperature bonding. After formic acid vapor/solution treatment, Cu film surface oxide was reduced, and surface became rougher. For formic acid vapor treatment, with the increase of treatment time, Cu film surface was reduced gradually at 200 • C, surface roughness and particle size became bigger. For formic acid solution treatment, the reduction of the surface of the copper film was the most abundant when the solution concentration is 50%. After the treatment with formic acid solution, the surface roughness and particle size of copper film increase significantly. As the formic acid solution on the surface of copper film has a certain role in corrosion, using formic acid solution treatment, better surface reduction and rougher surface for Cu film were obtained. By contrast, using formic acid vapor treatment, surface reduction is not so good, but surface is smoother than that treated by formic acid solution. Cu/Cu direct bonding was realized at 200 • C after formic acid vapor/solution treatment. Using formic acid vapor treatment, Cu/Cu bond strength is about 18.2 MPa, which is higher than that using formic acid solution treatment.

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Low-Temperature Cu–Cu Direct Bonding Using Pillar–Concave Structure in Advanced 3-D Heterogeneous Integration

Cited by 15 publications

References 14 publications

Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

A New Approach for the Control and Reduction of Warpage and Residual Stresses in Bonded Wafer

Study of Cu Film Surface Treatment Using Formic Acid Vapor/Solution for Low Temperature Bonding

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