Low temperature CuCu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement

Tan, Chuan Seng; Lim, D. F.; Ang, X. F.; Wei, Jun; Leong, K. C.

doi:10.1016/j.microrel.2011.04.003

Cited by 64 publications

(23 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Tan et al proposed a non-UHV and noncorrosive method to passivate the Cu surface with self-assembled monolayer (SAM) of alkane thiol and its subsequent desorption just prior to bonding [36]. SAM is an organic monolayer which not only passivates the Cu surface completely but also enhances the efficiency of passivation [37].…”

Section: Cu-cu Thermocompression Bonding Using Sammentioning

confidence: 99%

Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

Panigrahy

Kuan-Neng

2018

Journal of Electronic Packaging

View full text Add to dashboard Cite

Arguably, the integrated circuit (IC) industry has received robust scientific and technological attention due to the ultra-small and extremely fast transistors since past four decades that consents to Moore's law. The introduction of new interconnect materials as well as innovative architectures has aided for large-scale miniaturization of devices, but their contributions were limited. Thus, the focus has shifted toward the development of new integration approaches that reduce the interconnect delays which has been achieved successfully by three-dimensional integrated circuit (3D IC). At this juncture, semiconductor industries utilize Cu–Cu bonding as a key technique for 3D IC integration. This review paper focuses on the key role of low temperature Cu–Cu bonding, renaissance of the low temperature bonding, and current research trends to achieve low temperature Cu–Cu bonding for 3D IC and heterogeneous integration applications.

show abstract

Section: Cu-cu Thermocompression Bonding Using Sammentioning

confidence: 99%

Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

Panigrahy

Kuan-Neng

2018

Journal of Electronic Packaging

View full text Add to dashboard Cite

show abstract

“…Then, Tan et al proposed a non-UHV and non-corrosive passivation mechanism to passivate the Cu surface using self assembled monolayer (SAM) of alkane thiol and desorption of the same just prior to bonding at 250°C. [20][21][22] The major disadvantage of SAM based Cu surface passivation is it requires higher temperature for SAM desorption. 23) Hence, finding the right passivation material is one of the major challenges for low temperature fine-pitch Cu-Cu bonding.…”

Section: Introductionmentioning

confidence: 99%

Optimized ultra-thin manganin alloy passivated fine-pitch damascene compatible bump-less Cu–Cu bonding at sub 200 °C for three-dimensional Integration applications

Panigrahy¹,

Kumar²,

Bonam³

et al. 2017

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Enhanced Cu diffusion, Cu surface passivation, and smooth surface at the bonding interface are the key essentials for high quality Cu-Cu bonding. Previously, we have demonstrated optimized 3 nm thin Manganin metal-alloy passivation from oxidation and also helps to reduce the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrated an ultra fine-pitch (<25 µm) Cu-Cu bonding using an optimized Manganin metal-alloy passivation. This engineered surface passivation approach led to high quality bonding at sub 200°C temperature and 0.4 MPa. Very low specific contact resistance of 1.4 ' 10 %7 Ω cm 2 and the defect free bonded interface is clear indication of high quality bonding for future multilayer integrations. Furthermore, electrical characterization of the bonded structure was performed under various robust conditions as per International Technology Roadmap for Semiconductors (ITRS Roadmap) in order to satisfy the stability of the bonded structure.

show abstract

“…The TC bonding method is a stable and well-controlled process that can produce robust and reliable connections. 3,[10][11][12][13] In our previous study, we successfully accomplished TC bonding of a reliable FPCB-RPCB joint by using an Sn-AgCu interlayer.…”

Section: Introductionmentioning

confidence: 99%

Effect of Hygrothermal Treatment on Reliability of Thermo-Compression Bonded FPCB/RPCB Contact Joints

Yoon

Jung

2016

Mater. Trans.

View full text Add to dashboard Cite

In this study, electrodes on a exible printed circuit board (FPCB) and rigid printed circuit board (RPCB) were bonded together by thermo-compression (TC) bonding, using a Sn-3.0Ag-0.5Cu solder as an interlayer. In order to investigate the hygrothermal reliability of the TC bonded FPCB/RPCB joints, a temperature-humidity (TH) test of 85 C/85% relative humidity, and a 90 peel test, were conducted. The relationships between the TH treatment, peel strength, and failure analysis result were discussed. The peel strength signi cantly decreased as TH time increased. In contrast, a signi cant variation in electrical resistance was not observed during TH testing. Thin and uniform (Ni,Cu) 3 Sn 4 intermetallic compound (IMC) layers were formed at both FPCB/Sn-3.0Ag-0.5Cu/RPCB interfaces. After a TH test for 500 h, the thickness of the IMC layer was slightly increased. In the case of the joint without TH treatment, a fracture occurred at the polyimide of the FPCB. After the TH test, the degradation of the adhesion between the polyimide and Cu in the FPCB occurred, due to the hygrothermal treatment, resulting in a switch of failure mode, from a polyimide failure to a brittle polyimide/Cu interface failure. X-ray photoelectron spectroscopy (XPS) analyses showed that the decrease in C-O and C=O bond ratios caused a decrease in peel strength of the TC bonded FPCB-RPCB joints, after the TH test. When comparing the TH and HTS tests, the TH test signi cantly deteriorated the integrity of the TC bonded FPCB-RPCB joints.

show abstract

Low temperature CuCu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement

Cited by 64 publications

References 16 publications

Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

Optimized ultra-thin manganin alloy passivated fine-pitch damascene compatible bump-less Cu–Cu bonding at sub 200 °C for three-dimensional Integration applications

Effect of Hygrothermal Treatment on Reliability of Thermo-Compression Bonded FPCB/RPCB Contact Joints

Contact Info

Product

Resources

About