Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [ⁿBu₃Sn(TeⁿBu)]

Abstract

[nBu3Sn(TenBu)] is an effective precursor for the low temperature growth of continuous SnTe thin films by low pressure CVD; temperature-dependent thermoelectric characterisation of these p-type films is reported.

nBu2Sn(SnBu)2 and nBu3SnEnBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

“…The heavier tellurolate analogue, [Sn n Bu 3 (Te n Bu)], has recently been reported to be effective as a single source precursor for the growth of SnTe thin films by low pressure CVD. 41 4…”

Low-Pressure CVD of GeE (E = Te, Se, S) Thin Films from Alkylgermanium Chalcogenolate Precursors and Effect of Deposition Temperature on the Thermoelectric Performance of GeTe

“…The germanium­(IV) precursors ( 1 )–( 4 ) (Scheme ) were identified as potential candidates for the growth of the germanium monochalcogenides, GeE (E = Te, Se, S), as they incorporate direct bonds between the Ge and E atoms, have sufficient volatility to allow vaporization in the CVD reactor, and contain n -butyl groups that can readily undergo elimination reactions, leading to clean deposition of the target binary semiconductor. The target compounds ( 1 )–( 4 ) were isolated in very good yields as mobile oils using slight modifications of the methods developed for [Bu 3 Sn­(EBu)] (E = Te, Se, S), which we have shown to be effective precursors for the LPCVD growth of SnE thin films. , The synthesis of the selenolate and tellurolate precursors ( 1 )–( 3 ) requires a different synthetic route from that of ( 4 ). For the latter, a range of thiols are widely available commercially and simple deprotonation and salt elimination, as illustrated in Scheme (bottom), yield the target thiolate precursor ( 4 ).…”

“…The target compounds (1)− (4) were isolated in very good yields as mobile oils using slight modifications of the methods developed for [Bu 3 Sn(EBu)] (E = Te, Se, S), which we have shown to be effective precursors for the LPCVD growth of SnE thin films. 38,39 The synthesis of the selenolate and tellurolate precursors (1)−(3) requires a different synthetic route from that of (4). For the latter, a range of thiols are widely available commercially and simple deprotonation and salt elimination, as illustrated in Scheme 1 (bottom), yield the target thiolate precursor (4).…”

Physicochemical Properties of SnTe Thin Films Dependent on Compositional Ratios

“…Thin films (TFs) are one class of nanomaterials in which the morphology, crystallinity, and oxidation state can be controlled with relative ease. [ 9,10 ] There is a wide spectrum of methods to fabricate TFs including but not limited to chemical vapor deposition, [ 9 ] thermal evaporation, [ 10 ] atomic layer deposition, [ 11 ] molecular beam epitaxy, [ 12 ] pulsed laser deposition, [ 13 ] electrodeposition, [ 14 ] and radio frequency (RF) magnetron cosputtering. [ 15–17 ] Among them, RF magnetron cosputtering has advantages such as great adhesion, low degree of contamination, uniformity over large areas on the substrate, and high deposition rate.…”