Low temperature defect passivation technology for semiconductor electronic devices—supercritical fluids treatment process

Chang, Ting Chang; Chen, P.-H.; Lin, Chien-Yu; Shih, Chih‐Cheng

doi:10.1016/j.mtphys.2020.100225

Cited by 20 publications

(4 citation statements)

References 65 publications

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“…This study uses a low temperature defect passivation technology (LTDPT) with supercritical fluid (SCF) treatment for hydrogenation to passivate bulk defects for the SiC-GTO thyristor. The literature has SCF has the characteristic of high penetration, which can introduce specific elements into defective materials to passivate broken bonds and improve device performance [24,25]. In this study, CO 2 was used as a solvent to dissolve H 2 in SCF-CO 2 and bring hydrogen ions into the material to passivate the broken bonds in the material, thereby achieving the effect of increasing the breakdown voltage, reducing the forward breakover voltage (V BO ) and on-state current.…”

Section: Introductionmentioning

confidence: 99%

Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology

Wu¹,

Chen²,

Chang³

et al. 2021

Semicond. Sci. Technol.

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In the past, gate turn-off (GTO) thyristors were commonly used to either increase the length of the drift region or reduce the doping concentration to increase high-voltage and high-power applications. However, this results in an on-resistance (R on ) increase. In this study, we applied a supercritical fluid (SCF) treatment to devices which has the advantage of high permeability and low-temperature processing to passivate SiC-GTO bulk defects. After the proposed defect passivation, the breakdown voltage has been improved by 8% without increasing on-state resistance. In addition, the leakage current has also been suppressed more than 30% in average. This study also uses electrical analysis to understand the characteristics of the devices after SCF treatment, and then discusses the passivation mechanism of materials of the devices from this treatment.

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Section: Introductionmentioning

confidence: 99%

Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology

Wu¹,

Chen²,

Chang³

et al. 2021

Semicond. Sci. Technol.

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“…Therefore, implementing low-temperature treatments seems to be beneficial to the semiconductor fabrication process. The supercritical fluid (SCF) treatment featuring low operating temperature and high penetration capability [32][33][34][35] has proved to be an effective means for various electron devices in terms of material modification and defect passivation. The SCF state is a special state in which substances reach a certain temperature and…”

mentioning

confidence: 99%

Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique

Huang

Chen

Yeh

et al. 2023

Physica Status Solidi (a)

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A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag) doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO2) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag doped SiO2 (Ag:SiO2) thin film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO2‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multi‐level switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO2‐based device with the SCF sulfur treatment.This article is protected by copyright. All rights reserved.

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“…Aiming at increasing the hole concentration in p-GaN and further forming good ohmic contacts at the metal/ GaN doped by Mg interface, some techniques related to the activation of Mg dopants have been reported, such as the activation of Mg dopants by low-energy electron beam irradiation (LEEBI), 9) thermal annealing, 10,11) microwave treatment 12) and laser annealing. 13) A low-temperature supercritical fluid (SCF) process is proposed to improve the dielectric quality of MOSFETs, [14][15][16] memory devices 17,18) and passivate the oxygen vacancy for thin film transistor 19,20) without introducing process damage. It is well known that the SCF state is a special phase of matter with liquid-like high solubility and gas-like high penetration ability, which can introduce specific elements into defective materials to passivate the broken bonds and improves device performance.…”

mentioning

confidence: 99%

Activation of Mg impurities in epitaxial p-GaN with rapid thermal annealing assisted supercritical fluid treatment

Yang

Zhang

et al. 2023

Appl. Phys. Express

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The activation of Mg acceptor in p-GaN with rapid thermal annealing (RTA) assisted low-temperature supercritical fluid (SCF) treatment (RTA-A-SCF) was investigated. After RTA-A-SCF treatment, the luminescence band of N vacancy in PL spectra was significantly suppressed. An evident decrease of H concentration is also observed in secondary ion mass spectrometer (SIMS) measurements, it indicates an obvious decrease of Mg-H complexes in the p-GaN. In addition, the ohmic contacts has been well improved and the hole concentration has increased by an order of magnitude . The activation mechanism of RTA-A-SCF treatment was further analyzed by X-ray photoelectron spectroscopy (XPS).

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Low temperature defect passivation technology for semiconductor electronic devices—supercritical fluids treatment process

Cited by 20 publications

References 65 publications

Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology

Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology

Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique

Activation of Mg impurities in epitaxial p-GaN with rapid thermal annealing assisted supercritical fluid treatment

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