1995
DOI: 10.1016/0040-6090(96)80018-6
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Low-temperature deposition of II–VI compound semiconductors by synchrotron radiation using metalorganic sources

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Cited by 7 publications
(1 citation statement)
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“…However, such experiments open a completely novel perspective for complex direct-write nanofabrication. It should be mentioned that during the late 1980s and early 1990s several groups attempted to exploit broad-band synchrotron light [38][39][40][41] as well as the monochromatic X-ray beam of a photon-induced scanning Auger microscope [42,43] for additive manufacturing of metal deposits from metal organic precursors. However, due to limited instrumental capabilities, only spatially extended thin films with an optimum of some 10 µm resolution could be produced [43].FXBID exploits the photon energy-selectivity of synchrotron-based XRL and extends it by the idea of depositing metal nanostructures from suitable precursor gases [21,22].…”
mentioning
confidence: 99%
“…However, such experiments open a completely novel perspective for complex direct-write nanofabrication. It should be mentioned that during the late 1980s and early 1990s several groups attempted to exploit broad-band synchrotron light [38][39][40][41] as well as the monochromatic X-ray beam of a photon-induced scanning Auger microscope [42,43] for additive manufacturing of metal deposits from metal organic precursors. However, due to limited instrumental capabilities, only spatially extended thin films with an optimum of some 10 µm resolution could be produced [43].FXBID exploits the photon energy-selectivity of synchrotron-based XRL and extends it by the idea of depositing metal nanostructures from suitable precursor gases [21,22].…”
mentioning
confidence: 99%