Low-Temperature Electrical Characteristics of Strained-Si MOSFETs

Abstract

A description, based on the notion of the super Drinfeld double, of non-Abelian duality for the (4, 4) supersymmetric sigma model is given. We show that this model has non-Abelian supercurrents that obey non-commutative conservation laws. The explicit formulae of general solutions to Poisson-Lie T duality with and without spectator superfields are given. The classical canonical equivalence to worldsheet (4, 4) supersymmetric sigma models related by Poisson-Lie T duality is explicitly formulated.

Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETs

“…However, it is not clear whether the mobility gain of strained-Si nMOSFETs is due to a gain in conduction mass [2,3] or to a reduced phonons scattering rate [4]. In this paper, we present a detailed analysis of mobility limiting mechanisms between process induced (uniaxial) and substrate induced (biaxial) strained nMOSFETs.…”

Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

“…Recently, Si:SiGe heterostructure MOSFETs have been studied over a wide temperature range in order to gain information on the physical processes involved in the operation of these devices, with a view to comparing them to their Si counterpart [2][3][4]. Low temperature operation of both Si and SiGe devices results in improved transconductance, reduction of leakage currents and decrease in subthreshold slopes.…”