Low-temperature electrical conductivity of congruent lithium niobate crystals

Akhmadullin, I. Sh.; Golenishchev-Kutuzov, V. A.; Migachev, S. A.; Mironov, S.

doi:10.1134/1.1130517

Cited by 26 publications

(9 citation statements)

References 10 publications

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“…The least band gap was observed in LiNbO 3 :B and SLN, Table 3, the greatest-in CLN (3.78 eV). Due to [72], a pure CLN crystal band gap is 3.72 eV, which is close to the value characteristic of wide-gap semiconductors.…”

Section: Investigation Of Photovoltaic Fields and Bandgap In Linbo3:в...supporting

confidence: 60%

Boron Influence on Defect Structure and Properties of Lithium Niobate Crystals

et al. 2021

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Defect structure of nominally pure lithium niobate crystals grown from a boron doped charge have been studied by Raman and optical spectroscopy, laser conoscopy, and photoinduced light scattering. An influence of boron dopant on optical uniformity, photoelectrical fields values, and band gap have been also studied by these methods in LiNbO3 crystals. Despite a high concentration of boron in the charge (up to 2 mol%), content in the crystal does not exceed 10−4 wt%. We have calculated that boron incorporates only into tetrahedral voids of crystal structure as a part of groups [BO3]3−, which changes O–O bonds lengths in O6 octahedra. At this oxygen–metal clusters MeO6 (Me: Li, Nb) change their polarizability. The clusters determine optically nonlinear and ferroelectric properties of a crystal. Chemical interactions in the system Li2O–Nb2O5–B2O3 have been considered. Boron, being an active element, structures lithium niobate melt, which significantly influences defect structure and physical properties of a crystal grown from such a melt. At the same time, amount of defects NbLi and concentration of OH groups in LiNbO3:B is close to that in stoichiometric crystals; photorefractive effect, optical, and compositional uniformity on the contrary is higher.

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Section: Investigation Of Photovoltaic Fields and Bandgap In Linbo3:в...supporting

confidence: 60%

Boron Influence on Defect Structure and Properties of Lithium Niobate Crystals

et al. 2021

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“…It has a high Curie temperature (between 1141 and 1210 °C) and a commensurately large room temperature spontaneous polarisation (≈70 µC cm −2 ) that varies significantly with stoichiometry. [29,30] Under ambient conditions, the bulk single crystal is considered to be a perfect insulator [31,32] and this makes the contrast in transport behavior between domains and charged conducting domain walls particularly stark. LiNbO 3 is usually non-stoichiometric, as single crystal growth from the congruent melt leads to lithium deficiency and subtle associated defect chemistry.…”

Section: Lithium Niobatementioning

confidence: 99%

Ferroelectric Domain Wall Memristor

McConville

Wang

et al. 2020

Adv Funct Materials

112

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A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric‐field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this “domain wall memristor” demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.

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“…Let us discuss the possible reasons of these discrepancies. First of all, the W ac2 value for reduced LT sample is indicative of the polaronic conductivity at low temperatures [13], but the highest value W ac1 is close to the probable activation energy of oxygen vacancies V O diffusion [12]. On the other hand, the highest value W ac1 for as-grown crystal is typical for hydrogen conductivity in LT and LN crystals, while W ac2 value is indicative of the hopping electronic conductivity [10,14].…”

Section: Discussionmentioning

confidence: 97%

Electrical Properties of LiTaO₃Single Crystals at 290–450 K

Yatsenko¹,

Палатников

Макарова

et al. 2015

Ferroelectrics

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The investigation of the temperature dependence of the dark electrical conductivity of as grown LiTaO 3 single crystals and the crystals reduced in vacuum was carried out. The reducing of the LT in vacuum at 830 K causes a removal diffusion of hydrogen and a partial loss of oxygen. It leads to recharging of transition metal impurities to the lowest valence state and blocking of hopping electronic conductivity. After filling of electronic traps, the process of small polaron formation takes place.

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Low-temperature electrical conductivity of congruent lithium niobate crystals

Cited by 26 publications

References 10 publications

Boron Influence on Defect Structure and Properties of Lithium Niobate Crystals

Boron Influence on Defect Structure and Properties of Lithium Niobate Crystals

Ferroelectric Domain Wall Memristor

Electrical Properties of LiTaO₃Single Crystals at 290–450 K

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Low-temperature electrical conductivity of congruent lithium niobate crystals

Cited by 26 publications

References 10 publications

Boron Influence on Defect Structure and Properties of Lithium Niobate Crystals

Boron Influence on Defect Structure and Properties of Lithium Niobate Crystals

Ferroelectric Domain Wall Memristor

Electrical Properties of LiTaO3Single Crystals at 290–450 K

Contact Info

Product

Resources

About

Electrical Properties of LiTaO₃Single Crystals at 290–450 K