Low-temperature electrical transport in bilayer manganite<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">La</mml:mi></mml:mrow><mml:mrow><mml:mn>1.2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sr</mml:mi></mml:mrow><mml:mrow><mml:mn>1.8</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><

Zhang, C. L.; Chen, X. J.; Almasan, C. C.; Gardner, J. S.; Sarrao, J. L.

doi:10.1103/physrevb.65.134439

Cited by 32 publications

(23 citation statements)

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“…Moreover, a careful check of the low-temperature resistivity [13,14] has shown substantial deviation from the T 2 −like behavior in the very low temperature region. Other power-law temperature dependences of the resistivity have also been reported [10,14,15,16,17,18,19]. At present, there is no agreement on the actual scattering mechanism below the Curie temperature.…”

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confidence: 81%

Spin-wave scattering at low temperatures in manganite films

et al. 2003

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The temperature T and magnetic field H dependence of the resistivity ρ has been measured for La0.8−ySr0.2MnO3 (y=0 and 0.128) films grown on (100) SrTiO3 substrates. The low-temperature ρ in the ferromagnetic metallic region follows well ρ(H, T ) = ρ0(H) + A(H)ωs/ sinh(hωs/2kBT ) + B(H)T 7/2 with ρ0 being the residual resistivity. We attribute the second and third term to smallpolaron and spin-wave scattering, respectively. Our analysis based on these scattering mechanisms also gives the observed difference between the metal-insulator transition temperatures of the films studied. Transport measurements in applied magnetic field further indicate that spin-wave scattering is a key transport mechanism at low temperatures. The observation of colossal magnetoresistance CMR effect in manganite films [1] has produced a resurgence of interest in these materials for both fundamental physics and their possible application in recording media and magnetic switching devices. The microscopic transport mechanism in these materials has long been thought to be double exchange DE [2,3,4]. However, it has been realized [5] that the effective carrier-spin interaction in the DE model is too weak to lead to a significant reduction of the electronic bandwidth, which would justify the observed several orders of magnitude increase in conductivity just below the Curie temperature T C . Indeed, a large number of experiments have shown that the DE scenario alone cannot account for the properties of the manganites and that CMR is not purely electronic in origin [6,7].Low-temperature charge transport measurements of manganites in the ferromagnetic metallic state are essential in clarifying the specific mechanisms responsible for the CMR effect. At low temperatures, a dominant T 2 term in resistivity has generally been observed [8,9,10]. Although the T 2 behavior is consistent with electronelectron interaction [11], the coefficient of the T 2 term is about 60 to 70 times larger than the one expected for electron-electron scattering [12]. Moreover, a careful check of the low-temperature resistivity [13,14] has shown substantial deviation from the T 2 −like behavior in the very low temperature region. Other power-law temperature dependences of the resistivity have also been reported [10,14,15,16,17,18,19]. At present, there is no agreement on the actual scattering mechanism below the Curie temperature.Here, we address the low-temperature scattering mechanism in manganites through resistivity measurements of La 0.8−y Sr 0.2 MnO 3 (y = 0 and 0.128) films grown on SrTiO 3 substrates, measured in zero field as well as applied magnetic fields up to 14 T. Our data indicate that spin-wave scattering, which gives a T 7/2 dependence in the low-temperature resistivity, is a dominant dissipation mechanism in the ferromagnetic state of these manganites, besides scattering of small polarons by a soft optical phonon mode. Our analysis of the resistivity data in terms of small-polaron and spin-wave scattering mechanisms, and the spin fluctuation model also g...

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Spin-wave scattering at low temperatures in manganite films

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“…The transport behavior of DL manganites in AFM insulating region (T < T SG ) is very interesting and worthy of study. Earlier, Zhu et al [14] found the band transport process at T < T SG in polycrystalline La 1.4 Sr 1.6 Mn 2 O 7 , Zhang et al [36] fitted the upturn of resistivity using the Mott VRH equation in polycrystalline Co doped LaSr 2 Mn 2 O 7 and Zhang et al [9] and Okuda et al [37] showed that conductivity σ is proportional to T 1/2 in single crystals of DL manganites. The T 1/2 dependence of conductivity is a characteristic of weak localization effects in 3D disordered metals and indicate the contribution of electron-electron interactions to the conductivity.…”

Section: Antiferromagnetic Insulating Region (T < T Sg )mentioning

confidence: 98%

“…The reason may be due to the absence of T IM in many DL manganites and a small temperature range between T IM and T SG . Zhang et al [9] found T 9/2 dependence in single crystals of La 1.2 Sr 1.8 Mn 2 O 7 , but they did not include ρ 2 T 2 term. Therefore, to find the suitable law governing the variation of resistivity at T SG < T < T IM , we fitted the ρ−T data of the two samples to the polynomial law, taking the value of n from 2.5 to 7.5 and also to the equations ρ = ρ 0 + ρ 2 T 2 and ρ = ρ 0 + ρ 2.5 T 2.5 .…”

Section: Ferromagnetic Metallic Region (T Sg < T < T Im )mentioning

confidence: 99%

“…The SE interaction results in an AFM ground state that is insulating. Because of the reduced dimensionality, the balance between FM-DE and AFM-SE interactions between Mn ions is more subtle and is expected to be responsible for unusual transport properties observed in the DL manganites [8,9]. Therefore, one can expect that the slight changes in the size and/or concentration of (La,A) site ions can show significant effect on bulk transport and magnetic properties.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis, Characterization and Magnetotransport Behavior of La-Based Double Layered Manganites

Reddy

2017

Acta Phys. Pol. A

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The single phase double layered manganites La1.2Sr1.8−xCaxMn2O7 (x = 0.0, 0.3) were synthesized by the sol-gel method. The electrical resistivity at various magnetic fields over a temperature range 4.2-300 K was measured. The insulator-to-metal transition temperature (TIM ) decreases from 123 K (x = 0.0) to 70 K (x = 0.3). The spin-glass (SG)-like transition is observed in both the samples at 30 K (TSG -SG-like transition temperature). The transport behavior is analyzed in the entire temperature range (4.2-300 K) in three different regions: paramagnetic insulating region (T > TIM ), ferromagnetic metallic region (TSG < T < TIM ) and antiferromagnetic insulating region (T < TSG) by fitting the equations governing the conduction process to the temperature dependent resistivity data in different temperature regions. The results indicate that the Mott variable range hopping (VRH) dominates the transport behavior at T > TIM in the two samples. At TSG < T < TIM , the conduction follows the Zener polynomial law ρ = ρ0 +ρ2T 2 +ρ4.5T 4.5 which suggests the contribution of two-magnon scattering process to the conduction. The zero field conductivity at T < TSG obeys T 1/2 dependence, consistent with weak localization effects.

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“…The two important interactions between Mn ions, namely double exchange (DE) driven ferromagnetic (FM) interactions and superexchange (SE) driven antiferromagnetic (AFM) interactions, are responsible for the observed transport and magnetic properties of the manganites. Because of reduced dimensionality, the balance between FM DE and AFM SE interactions between Mn ions is more subtle [15,16]. Therefore, one can expect that the slight changes in the size and/or concentration of (R,A) site ions can result in significant effect on bulk transport and magnetic properties.…”

Section: Thementioning

confidence: 99%

Electrical transport and magnetoresistance of double layered CMR manganites R_1.2Sr_1.8Mn₂O₇(R = La, Pr, Sm)

Reddy

2017

Materials Science-Poland

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Polycrystalline bulk samples of double layered (DL) colossal magnetoresistive (CMR) manganites R 1.2 Sr 1.8 Mn 2 O 7 (R = La, Pr, Sm) were prepared by sol-gel method to study the effect of size of lanthanide ion on their magnetotransport properties. The electrical resistivity of the samples was investigated in the temperature range of 70 K to 300 K at different magnetic fields. The samples LSMO and PSMO show insulator-to-metal transition (IMT) behavior, while SSMO sample exhibits insulating behavior in the entire temperature range with a very large value of resistivity. The insulator-to-metal transition temperature (T IM ) decreases from 123 K (LSMO) to 90 K (PSMO) and disappears in SSMO sample. To explain the electrical transport above T IM , the temperature dependent resistivity data (T > T IM ) of all the samples were fitted to the equations of different conduction models. The results indicate that the conduction at T > T IM is due to Mott variable range hopping (VRH) mechanism in the LSMO and PSMO samples, while Efros-Shkloskii (ES) type of VRH model dominates the conduction process in the SSMO sample. All the three samples show increasing magnetoresistance (MR) even below T IM and the maximum MR is shown by LSMO (39 % at 75 K, 3 T).

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Low-temperature electrical transport in bilayer manganiteLa1.2Sr1.8Mn<

Cited by 32 publications

References 38 publications

Spin-wave scattering at low temperatures in manganite films

Spin-wave scattering at low temperatures in manganite films

Synthesis, Characterization and Magnetotransport Behavior of La-Based Double Layered Manganites

Electrical transport and magnetoresistance of double layered CMR manganites R_1.2Sr_1.8Mn₂O₇(R = La, Pr, Sm)

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Low-temperature electrical transport in bilayer manganiteLa1.2Sr1.8Mn<

Cited by 32 publications

References 38 publications

Spin-wave scattering at low temperatures in manganite films

Spin-wave scattering at low temperatures in manganite films

Synthesis, Characterization and Magnetotransport Behavior of La-Based Double Layered Manganites

Electrical transport and magnetoresistance of double layered CMR manganites R1.2Sr1.8Mn2O7(R = La, Pr, Sm)

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Electrical transport and magnetoresistance of double layered CMR manganites R_1.2Sr_1.8Mn₂O₇(R = La, Pr, Sm)