Low-temperature electrochemical characterization of sputtered yttria-stabilized zirconia thin film on silicon substrate

Abstract

The microstructure and electrical conductivity of yttria-stabilized zirconia (YSZ) thin films with Pt electrodes were evaluated through three configurations in the temperature range from 25 to 500 °C. Using ac-impedance spectra, the contribution of the Si substrate to resistance was separated by an equivalent-circuit analysis. The colossal ionic conductivity of YSZ thin films at temperatures higher than 125 °C was observed parallel to the interface. The total ionic conductivity of YSZ thin films increased significantly in comparison w the bulk YSZ electrolyte. An alternative conductive pathway ascribed to the homogeneous and heterogeneous interfaces with high strain and charge-containing defects was proposed.