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Significant reduction by 40 times was achieved in the leakage current of TiO2 passivated porous silicon (PS) Schottky-barrier diode, compared to that of as-grown PS one. It was found that the imperfect native oxide, nonstoichiometric Si-suboxide (SiOx) and Si-O bond with nonbridging oxygen, and highly chemically reactive Si–H2 species are the issues of leakage current. These issues can be drastically suppressed and replaced by a stable stoichiometric SiO2 and Si–OH bond on the TiO2 passivated PS surface. The enriched OH formation will favor the growth of TiO2 and passivate the surface states of PS, hence reducing the leakage current.

The microstructure and electrical conductivity of yttria-stabilized zirconia (YSZ) thin films with Pt electrodes were evaluated through three configurations in the temperature range from 25 to 500 °C. Using ac-impedance spectra, the contribution of the Si substrate to resistance was separated by an equivalent-circuit analysis. The colossal ionic conductivity of YSZ thin films at temperatures higher than 125 °C was observed parallel to the interface. The total ionic conductivity of YSZ thin films increased significantly in comparison w the bulk YSZ electrolyte. An alternative conductive pathway ascribed to the homogeneous and heterogeneous interfaces with high strain and charge-containing defects was proposed.