Low-temperature formation of platinum silicides on polycrystalline silicon

Чиж, К. В.; Dubkov, V. P.; Senkov, V. M.; Pirshin, I. V.; Arapkina, Larisa V.; Mironov, S.; Orekhov, A. S.; Yuryev, Vladimir A.

doi:10.1016/j.jallcom.2020.155908

Cited by 7 publications

(1 citation statement)

References 23 publications

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“…For example, ohmic contact with the lightly doped thin device layer is best achieved by the formation of a thin layer of PtSi alloys at the interface of Ta/Pt and silicon. However, this process is too sensitive to the thickness of the silicide formation and the annealing temperature to provide reproducible results with our device layer thickness [ 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 ]. We have overcome this issue by optimization of the annealing process to get a reliable planar junctionless FET device, and in the end, we have demonstrated the pH sensing performance of our fabricated device.…”

Section: Introductionmentioning

confidence: 99%

Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions

Shukla

Bomer

Wijnperle

et al. 2022

Sensors

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Label-free field-effect transistor-based immunosensors are promising candidates for proteomics and peptidomics-based diagnostics and therapeutics due to their high multiplexing capability, fast response time, and ability to increase the sensor sensitivity due to the short length of peptides. In this work, planar junctionless field-effect transistor sensors (FETs) were fabricated and characterized for pH sensing. The device with SiO2 gate oxide has shown voltage sensitivity of 41.8 ± 1.4, 39.9 ± 1.4, 39.0 ± 1.1, and 37.6 ± 1.0 mV/pH for constant drain currents of 5, 10, 20, and 50 nA, respectively, with a drain to source voltage of 0.05 V. The drift analysis shows a stability over time of −18 nA/h (pH 7.75), −3.5 nA/h (pH 6.84), −0.5 nA/h (pH 4.91), 0.5 nA/h (pH 3.43), corresponding to a pH drift of −0.45, −0.09, −0.01, and 0.01 per h. Theoretical modeling and simulation resulted in a mean value of the surface states of 3.8 × 1015/cm2 with a standard deviation of 3.6 × 1015/cm2. We have experimentally verified the number of surface sites due to APTES, peptide, and protein immobilization, which is in line with the theoretical calculations for FETs to be used for detecting peptide-protein interactions for future applications.

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Section: Introductionmentioning

confidence: 99%

Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions

Shukla

Bomer

Wijnperle

et al. 2022

Sensors

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Achieving High Ferroelectric Polarization in Ultrathin BaTiO₃ Films on Si

Bagul,

Han,

Lagrain

et al. 2024

Adv Elect Materials

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Ferroelectrics show promise for low‐power, non‐volatile memory technologies. However, material challenges in state‐of‐the‐art ferroelectric hafnates and the high coercive fields required limit their application in devices. Scaling of other candidate materials is challenging, often requiring epitaxial single‐crystalline growth using specialised substrates. Here, ferroelectricity is demonstrated in polycrystalline BaTiO3 films at 10 nm thickness on Si substrates. They exhibit the highest reported remnant polarization for polycrystalline layers, 13 µC cm−2, a value that is competitive with the epitaxial BaTiO3 state‐of‐the‐art. This is realised by introducing a novel conductive oxygen barrier, platinum silicide, which also offers strain enhancement of the ferroelectricity. Moreover, it is demonstrated that these layers can be positioned in device‐like stacks whilst maintaining ferroelectricity at 10 nm. The findings of polycrystalline perovskite ferroelectric growth in stack configurations akin to those in production flows paves the way for high performance perovskites with greater material complexity.

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Microstructural and phase evolution in Nb–Si intermetallic thin films deposited using the pulsed laser ablation technique

Kashyap

2024

J Mater Sci

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Low-temperature formation of platinum silicides on polycrystalline silicon

Cited by 7 publications

References 23 publications

Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions

Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions

Achieving High Ferroelectric Polarization in Ultrathin BaTiO₃ Films on Si

Microstructural and phase evolution in Nb–Si intermetallic thin films deposited using the pulsed laser ablation technique

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Low-temperature formation of platinum silicides on polycrystalline silicon

Cited by 7 publications

References 23 publications

Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions

Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions

Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si

Microstructural and phase evolution in Nb–Si intermetallic thin films deposited using the pulsed laser ablation technique

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Product

Resources

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Achieving High Ferroelectric Polarization in Ultrathin BaTiO₃ Films on Si