Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors

Yao, Guangyu; Ma, Hanbin; Sambandan, Sanjiv; Nathan, Arokia

doi:10.1109/edtm47692.2020.9117859

Cited by 1 publication

(1 citation statement)

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“…In this work, we extend our previous work reported in [14], providing a systematic account of the material attributes and process integration considerations pertinent to ISO TFTs. We present ISO TFTs fabricated using an all-photolithographic process at a maximum temperature of 200°C, in which the ISO is deposited by DC sputtering and the dielectric layers by atomic layer deposition.…”

Section: Introductionmentioning

confidence: 70%

Indium Silicon Oxide TFT Fully Photolithographically Processed for Circuit Integration

Yao

Sambandan

et al. 2020

IEEE J. Electron Devices Soc.

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A new class of amorphous oxide semiconductors based on InOx doped with Ti, W or Si seems to show great promise for large area, flexible, electronics. Of particular interest is the In2O3:SiO2 system as it has a relatively large bond dissociation energy, hence highly suited for long-term environmental stability. In this paper, we present a sub-200°C fully photolithographically-processed indium oxide thin film transistor that is fully compatible to circuit integration on plastic substrates. The TFTs typically showed a mobility of 5 cm 2 /Vs, a threshold voltage of -0.16 V and a subthreshold swing of 312 mV/dec. We report on its stability behavior when subject to electrical bias stress and negative bias illumination stress, along with a pulse-based compensation solution for persistent photoconductivity arising from the latter. Following static characterization and subsequent parameter extraction of the indium silicon oxide TFT, design considerations are presented along with measurement results of a fully integrated TFT voltage amplifier with high impedance subthreshold loading.

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Section: Introductionmentioning

confidence: 70%