A facile method for realizing both inkjet printed electrodes with improved resolution and patterned semiconductor islands was developed to fabricate all solution processed low-voltage organic thin film transistors (OTFTs). By reducing the surface wettability of the polymer gate dielectric layer through coating of a self-assembled monolayer (SAM), fine and narrow inkjet printed source/drain electrodes (a line width of about 35 mm) and short channels (about 15 mm) were formed with very good yield and uniformity using an inkjet printer with a 10 pL drop volume print head and limited registration accuracy.The coated SAM layer was then selectively removed by ultraviolet ozone treatment to create patterned wettable and less wettable regions to form self-assembled organic semiconductor islands. The fabricated low voltage OTFTs present a high quality semiconductor/dielectric interface and good device performance.

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One‐dimensional (1‐D) Dynamic supply Voltage Scaling (DVS) scheme with image distortion compensation is proposed for reducing the static power consumption in AMOLED displays. A hybrid simulation platform combining MATLAB and circuit simulator HSPICE was built for the study. By applying the DVS scheme to both static images and video streams, it is shown significant power saving can be achieved (>40% for the test video streams) without sacrifice of the image or video quality.

This paper presents a new voltage driving scheme with current feedback for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) to drive active matrix organic light-emitting diode (AMOLED) displays. The pixel circuit is relatively simple, which is composed of 3 TFTs and 1 capacitor. Circuit simulation results show that the proposed driving scheme can effectively suppress the influence of nonidealities of typical poly-Si TFTs including kink effects, spatial nonuniformity of the electrical characteristics. This method also presents a settling time less than 3 s with panel load of 100 pF/1.5 k at all OLED current levels. Index Terms-Active-matrix organic light-emitting diode (AMOLED), current feedback, low temperature polycrystalline silicon (LTPS), thin-film transistor (TFT).Wenjiang Liu is currently an Assistant Professor with the

A new class of amorphous oxide semiconductors based on InOx doped with Ti, W or Si seems to show great promise for large area, flexible, electronics. Of particular interest is the In2O3:SiO2 system as it has a relatively large bond dissociation energy, hence highly suited for long-term environmental stability. In this paper, we present a sub-200°C fully photolithographically-processed indium oxide thin film transistor that is fully compatible to circuit integration on plastic substrates. The TFTs typically showed a mobility of 5 cm 2 /Vs, a threshold voltage of -0.16 V and a subthreshold swing of 312 mV/dec. We report on its stability behavior when subject to electrical bias stress and negative bias illumination stress, along with a pulse-based compensation solution for persistent photoconductivity arising from the latter. Following static characterization and subsequent parameter extraction of the indium silicon oxide TFT, design considerations are presented along with measurement results of a fully integrated TFT voltage amplifier with high impedance subthreshold loading.