Low Temperature Growth of Epitaxial (Ba, Sr)TiO₃ Thin Film by Sputter Molecular Beam Epitaxy Method

Abstract

A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO 3 films are grown at a pressure below 6 × 10 −4 Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350 • C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

Active oxygen generator by silent discharge and oxidation power in formation of oxide thin films

“…Generators for ozone and active oxygen are sold commercially as ozonizers and radical beams, respectively. There are separate reports [4][5][6] on oxide thin film formation using oxygen, ozone, or active oxygen by generating an oxidation-promoting gas using such devices. However, there are no reports that compare the oxidation capacity of these three gases using the same gas irradiation conditions.…”

Homoepitaxial Growth of SrTiO3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370°C

“…Layer-by-layer growth of typical perovskite oxide single crystal films, such as SrTiO 3 , has usually been carried out at temperatures above 600 • C. [2][3][4][5][6] Attempts to reduce the growth temperature of perovskite oxides have been made and attained. [7][8][9][10] For low-temperature oxide epitaxy, reactive oxidants such as ozone, oxygen radicals and plasma irradiation are generally used in order to oxidize the component metals and crystallize the components. For crystallization in a layer-by-layer fashion, a certain level of mobility of the surface adatom is necessary.…”