Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Izyumskaya, N.; Alivov, Ya. I.; Morkoç̌, H.

doi:10.1080/10408430903368401

Cited by 177 publications

(122 citation statements)

References 944 publications

Supporting

Mentioning

119

Contrasting

Unclassified

Order By: Relevance

“…The study of doped magnetic oxides that have robust magnetism at room temperature (RT) has been pursued energetically in recent years because of the possibility of their use in spintronic devices [1,2]. The semiconductor In 2 O 3 has a cubic bixbyite structure and is transparent in the visible region; it is widely used in semiconductor devices particularly when it is doped with Sn (ITO) to make it more conductive [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Magnetic properties ofIn2O3containingFe3O4nanoparticles

et al. 2014

View full text Add to dashboard Cite

Films of Fe-doped In 2 O 3 that were deliberately fabricated so they contained Fe 3 O 4 nanoparticles were deposited on sapphire substrates by pulsed laser deposition at low oxygen pressure. The concentration of Fe was varied between 1% and 5%, and the effect of including 5% of Sn and vacuum annealing were also investigated. Structural analysis indicated a high concentration of Fe 3 O 4 nanoparticles that caused substantial values of the coercive field at room temperature. Transport measurements indicated that the films were metallic, and an anomalous Hall effect was observed for the sample with 5% of Fe. The concentration of nanoparticles was reduced dramatically by the inclusion of 5% of Sn. Magnetic circular dichroism spectra taken in field and at remanence were analyzed to show that the samples had a magnetically polarized defect band located below the conduction band as well as magnetic Fe 3 O 4 nanoparticles. The signal from the defect states near the band edge was enhanced by increasing the number of carriers by either including Sn or by annealing in vacuum.

show abstract

Section: Introductionmentioning

confidence: 99%

Magnetic properties ofIn2O3containingFe3O4nanoparticles

et al. 2014

View full text Add to dashboard Cite

show abstract

“…[Remmel et al, 1999] Sr-rich (Ba 1-x Sr x )TiO 3 ceramics have perovskite cubic structure. [Izumskaya et al, 2010] The lattice constant of BST versus composition had reported by Baumert et al [Baumert et al, 1997] who showed the cubic phase was found when the ST content is higher than 24% which is lower than that of Keller. Anyway, the perovskite tetragonal structure remains with the ST content in the range of 1-15 mol% addition.…”

Section: Compositionmentioning

confidence: 99%

Evaluation on Structure Modification and Properties of (Ba1-xSrx)(Ti1-y Zry)O3 Ceramics by using Rietveld Method

Huang¹,

Chiu²,

Wu³

et al. 2011

Advances in Ceramics - Electric and Magnetic Ceramics, Bioceramics, Ceramics and Environment

View full text Add to dashboard Cite

“…The rare earth oxides, various lanthanides, and their silicates are also be counted as potentially promising candidates, despite the fact that in some cases the permittivity increase is only moderate [17]. Rare earth scandates have also been introduced as high-k candidates; for example, GdScO 3 has been reported to have permittivity value of about 20.0, which is considerably higher than those of the constituent oxides, Gd 2 O 3 and Sc 2 O 3 [18][19][20]. The detailed feature list for high-k materials is presented in Table 1.…”

Section: Introductionmentioning

confidence: 99%

Advanced CMOS Gate Stack: Present Research Progress

Zhao

Werner

Taylor

et al. 2012

ISRN Nanotechnology

View full text Add to dashboard Cite

The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor technology require the replacement of SiO 2 with gate dielectrics that have a high dielectric constant (high-k). When the SiO 2 gate thickness is reduced below 1.4 nm, electron tunneling effects and high leakage currents occur which present serious obstacles for device reliability. In recent years, various alternative gate dielectrics have been researched. Following the introduction of HfO 2 into the 45 nm process by Intel in 2007, the screening and selection of high-k gate stacks, understanding their properties, and their integration into CMOS technology have been a very active research area. This paper reviews the progress and efforts made in the recent years for high-k dielectrics, which can be potentially integrated into 22 nm (and beyond) technology nodes. Our work includes deposition techniques, physical characterization methods at the atomic scale, and device reliability as the focus. For most of the materials discussed here, structural and physical properties, dielectric relaxation issues, and projections towards future applications are also discussed.

show abstract

Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Cited by 177 publications

References 944 publications

Magnetic properties ofIn2O3containingFe3O4nanoparticles

Magnetic properties ofIn2O3containingFe3O4nanoparticles

Evaluation on Structure Modification and Properties of (Ba1-xSrx)(Ti1-y Zry)O3 Ceramics by using Rietveld Method

Advanced CMOS Gate Stack: Present Research Progress

Contact Info

Product

Resources

About