Low-temperature growth of epitaxial (100) silicon based on silane and disilane in a 300mm UHV/CVD cold-wall reactor

Adam, Thomas; Bedell, Stephen W.; Reznicek, A.; Sadana, D. K.; Venkateshan, A.; Tsunoda, T.; Seino, Takuya; Nakatsuru, Junko; Shinde, S. R.

doi:10.1016/j.jcrysgro.2010.09.012

Cited by 17 publications

(15 citation statements)

References 18 publications

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“…450-500°C, is located below the GR "plateau" evidenced in [15]. Those activation energies are close to (i) values obtained using either gas source-molecular beam epitaxy (2.56 eV, [16,17]) or ultra high vacuum-CVD (2-2.1 eV range [18]) and (ii) the Si-H bond energy (~2.0 eV). This likely means that H desorption from the surface is the main growth-rate limiting mechanism.…”

Section: Intrinsic Si Growth Kinetics At Low Temperaturesupporting

confidence: 82%

Epitaxial growth of Si and SiGe at temperatures lower than 500°C with disilane and germane

2016

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Section: Intrinsic Si Growth Kinetics At Low Temperaturesupporting

confidence: 82%

Epitaxial growth of Si and SiGe at temperatures lower than 500°C with disilane and germane

2016

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“…High-order silanes are candidate Si precursors for low-temperature Si epitaxy due to the lower strength of the Si-Si bonds compared to the Si-H bonds. Previous studies have been conducted on high-order silane-based Si or SiGe epitaxy utilizing disilane [1,2], trisilane [3][4][5][6], tetrasilane [7,8], or neopentasilane [9,10]. However, these studies have focused on one or two high-order silanes compared to conventional precursors (silane; SiH 4 or dichlorosilane; SiCl 2 H 2 ), and most were performed in RPCVD or LPCVD chambers with an abundance of ambient H 2 or N 2 .…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

et al. 2021

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Conventional Si or SiGe epitaxy via chemical vapor deposition is performed at high temperatures with a large amount of hydrogen gas using silane (SiH4) or dichlorosilane (SiCl2H2) precursors. These conventional precursors show low growth rates at low temperatures, particularly below 500 °C although a low thermal budget becomes more important for modern fabrication techniques. High-order silane precursors, such as disilane, trisilane, and tetrasilane, are candidates for low-temperature epitaxy due to the lower strength of the Si-Si bonds compared to that of the Si-H bonds. In addition, the consumption of vast amounts of hydrogen gas is an additional burden of the low-temperature process due to its low throughput. In this study, we explored Si and SiGe epitaxial growth behaviors using several high-order silanes under ultra-high vacuum chemical vapor deposition (UHVCVD) and low-pressure chemical vapor deposition (LPCVD) conditions without a carrier gas. Disilane showed high-quality epi-growth under both pressure conditions, whereas trisilane and tetrasilane showed enhanced growth rates and lower quality.

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“…The specific type of CVD process that is of interest to us is ultra-high vacuum CVD (UHVCVD). This process has been introduced in the literature by Meyerson (1986) and a well-known application is the deposition of SiGe for microelectronics manufacturing (Greve and Racanelli (1991), Meyerson (1992), Adam et al (2010)). UHVCVD is a candidate process type for precursors that have a tendency to bind with residual gases or for applications with extraordinary high purity demands.…”

Section: Introductionmentioning

confidence: 99%

Toward observable UHVCVD: Modeling of flow dynamics and AAS partial pressure measurement implementation

et al. 2020

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Ultra-high vacuum chemical vapor deposition is a thin film deposition process that features excellent film purity, but is sensitive to the processing variations (such as, the precursors and their dispensers, the reactor's initial condition, etc.). In this paper, we present the design of a ultra-high vacuum chemical vapor deposition reactor with in-situ partial pressure atomic absorption spectroscopy measurement that improves reproducibility and observability of such a process. Our main contributions are: (i). a conceptual control systems design of ultra-high vacuum chemical vapor deposition; (ii). atomic absorption spectroscopy based sensor design for the real-time in-situ partial pressure measurements; (iii). a flux dynamical model; (iv). experimental reactor design; and (v). experimental validation of model components and the atomic absorption spectroscopy measurement technique. Our results show that the proposed sensor systems are able to provide real-time measurements of the partial pressure inside the reactor and our proposed flux dynamical model agrees with the measured partial pressure. The latter allows us to use it in the design of model-based output feedback control of the partial pressure.

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Low-temperature growth of epitaxial (100) silicon based on silane and disilane in a 300mm UHV/CVD cold-wall reactor

Cited by 17 publications

References 18 publications

Epitaxial growth of Si and SiGe at temperatures lower than 500°C with disilane and germane

Epitaxial growth of Si and SiGe at temperatures lower than 500°C with disilane and germane

Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

Toward observable UHVCVD: Modeling of flow dynamics and AAS partial pressure measurement implementation

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