Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

Kuo, Wen Chuan; Lee, Ming Jay; Wu, Mount-Learn; Lee, Chien Chieh; Tsao, I-Yu; Chang, Jenq Yang

doi:10.1016/j.sse.2017.01.010

Cited by 5 publications

(2 citation statements)

References 22 publications

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“…The high concentration in situ or ex situ doping of Si 1– x Ge x and Ge thin films has attracted significant research interest recently due to its wide ranging applications in state-of-the-art complementary metal-oxide-semiconductor (CMOS) technology, − monolithically integrated photonic and optoelectronic devices on Si, − and spintronics. , Although significant effort has been devoted toward achieving heavily doped Si 1– x Ge x and Ge − materials exhibiting monocrystalline structure, , high dopant activation levels, , and low surface roughness, little to no attention has been given to the origin of the B-induced Ge crystal distortion that has been repeatedly observed in practice. Moreover, as complex heterostructures become increasingly desirable in future device technologies owing to their unique electronic and optical properties, the integration of intrinsic and doped Ge thin films on multiple substrate platforms will be essential.…”

Section: Introductionmentioning

confidence: 99%

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

Clavel

Greene‐Diniz

Grüning

et al. 2019

ACS Appl. Electron. Mater.

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A joint experimental and theoretical framework for the decoupling of boron (B) doping and stoichiometric-induced modifications to the structural properties and electronic band structure of germanium (Ge)/AlAs(001) heterostructures is presented. The effect of B-induced stress on nearest-neighbor Ge bonds is quantified via X-ray diffractometry and Raman spectroscopic analysis and subsequently interpreted through the lens of density functional perturbation theory. Similarly, experimental determination of the energy band alignment at the p-type Ge:B/AlAs heterointerface is understood using a density functional theory approach to model the influence of heterointerface stoichiometry and interatomic bonding between group IV and III–V interfacial atoms on the valence and conduction band discontinuities. The modeled two monolayer interatomic diffusion at the Ge/AlAs heterointerface is confirmed via atom probe tomography analysis, demonstrating a ∼6 Å interfacial width. These results present a unified picture of the Ge:B/AlAs(001) material system, highlighting the influence of B on its structural and electronic properties, and provide a path for the engineering of such heterointerfaces through high concentration dopant incorporation within the overlying Ge epilayer.

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Section: Introductionmentioning

confidence: 99%

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

Clavel

Greene‐Diniz

Grüning

et al. 2019

ACS Appl. Electron. Mater.

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“…Firstly, TDDs in the Ge absorption layer are still high. To eliminate the TDDs, numerous strategies were proposed in recent decades, including doped Ge buffer layers [ 108 , 109 , 110 ], compositionally graded SiGe buffer layers [ 111 , 112 , 113 ], ultra-thin Si/SiGe superlattice buffer layers [ 114 , 115 ], high temperature annealing [ 116 , 117 , 118 ], three-step growth [ 119 , 120 ], the selective epitaxial growth (SEG) method [ 121 , 122 , 123 ], etc. With the continuous effort focused on decreasing the TDDs in the Ge layer, the TDDs for the top Ge layer were evaluated to be in the orders of 10 6 –10 7 cm −2 .…”

Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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Characterization and mechanism of crystallization of Ge films on silicon substrate with graphite buffer layer

Tao

Chen

Wang

et al. 2018

Materials Science in Semiconductor Processing

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Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

Cited by 5 publications

References 22 publications

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Characterization and mechanism of crystallization of Ge films on silicon substrate with graphite buffer layer

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