Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Liang, Jiantao; Yang, Yuhui; Kong, Deqi; Song, Zhibang; Wang, Wenliang; Li, Guoqiang

doi:10.1016/j.vacuum.2020.109687

Cited by 10 publications

(3 citation statements)

References 18 publications

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“…When the gradually varied-Al-content AlGaN layer was introduced for sample E, the BSFs density was further reduced by 71% compared to sample D, as low as 2.95 × 10 4 cm −1 , and an order of magnitude reduction was achieved compared to sample A. This density was reduced by 64% compared to our previous work (8.13 × 10 4 cm −1 ) on the growth of nonpolar a-plane GaN using an in situ SiN x interlayer [42], and reduced by 56% compared to the result (6.7 × 10 4 cm −1 ) reported by J. Liang et al on the growth of a-plane GaN on lattice-matched LaAlO 3 substrates [43]. In fact, the evolution trend of the BSFs density of the five samples was basically consistent with that of the FWHM of the XRCs, as shown in Figure 3b.…”

Section: Iii-nitrides Along C-direction Of Iii-nitrides Along M-direc...contrasting

confidence: 55%

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Zhao

Suo

et al. 2023

Crystals

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Nonpolar (112¯0) a-plane GaN films were grown on semipolar (11¯02) r-plane sapphire substrates using various buffer layers within a low-pressure metal organic chemical vapor deposition system. The structural properties of nonpolar a-plane GaN films were intensively investigated by X-ray diffraction and Raman spectra measurements. A set of buffer layers were adopted from a GaN layer to a composite layer containing a multiple AlN layers and a gradually varied-Al-content AlGaN layer, the full width at half maximum of the X-ray rocking curves measured along the [0001] and [101¯0] directions of a-plane GaN were reduced by 35% and 37%, respectively. It was also found that the basal-plane stacking faults (BSFs) density can be effectively reduced by the heterogeneous interface introduced together with the composite buffer layer. An order of magnitude reduction in BSFs density, as low as 2.95 × 104 cm−1, and a pit-free surface morphology were achieved for the a-plane GaN film grown with the composite buffer layer, which is promising for the development of nonpolar GaN-based devices in the future.

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Section: Iii-nitrides Along C-direction Of Iii-nitrides Along M-direc...contrasting

confidence: 55%

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Zhao

Suo

et al. 2023

Crystals

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“…At present, metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE) are commonly used to grow III-V nitride semiconductor materials, such as GaN and AlN. [19][20][21][22][23] Compared to other epitaxial methods, HVPE possesses advantages of high temperature, high growth rate, few impurity defects, and simple equipment, making it suitable for producing large-size singlecrystal thick films. 24,25 However, high-quality AlN thick films grown on sapphire substrates are still challenging since the large lattice and thermal mismatch between AlN and sapphire result in high dislocation density (∼10 9 cm −2 ) and large residual stress in the AlN epitaxial layer.…”

Section: Introductionmentioning

confidence: 99%

Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy

Chen,

Fang,

Zhang

et al. 2024

CrystEngComm

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“…Gallium nitride (GaN) is one of the attractive semiconductor materials attributed to its excellent physical and chemical properties. , Limited to the high cost of bulk GaN substrate, GaN is commonly grown on some foreign substrates like sapphire, Si, and SiC . Various functional materials are used for the heteroepitaxy of GaN films in order to reduce the lattice and thermal mismatch between GaN and foreign substrates. − In recent years, langasite (La 3 Ga 5 SiO 14 , LGS) crystal has gained attention as a novel substrate for growing single-crystalline GaN films due to the small lattice mismatch (∼3.2%) and thermal expansion coefficient difference (∼7.5%) …”

Section: Introductionmentioning

confidence: 99%

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition

Wang,

Xu,

Wang

et al. 2023

Crystal Growth & Design

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Langasite (La 3 Ga 5 SiO 14 , LGS) family crystals are known for their piezoelectric properties, which make them widely applicable in surface acoustic wave (SAW) devices. The group-III metal nitrides formed on LGS substrates are found to enable significant extension of SAW devices to higher-frequency ranges. However, the Ga element in LGS crystals is observed to volatilize in H 2 at high temperatures, forming Ga droplets and degrading the film quality. This study reports the growth of GaN films on the Ga-free LGS-type crystal Ca 3 NbAl 3 Si 2 O 14 (CNAS) by metal−organic chemical vapor deposition (MOCVD), and the CNAS is stable in MOCVD. The as-grown GaN films are continuous and smooth with a roughness of 0.369 nm. The epitaxial relationship between GaN and CNAS is GaN(0001)//CNAS(0001) and GaN(10−12)//CNAS(21−32). The mixed dislocations are found to be dominant type of dislocations of the GaN films on CNAS. The GaN films also exhibit good optical properties and a compressive stress of 0.17 GPa. Thus, the results indicate that the Ga-free LGS-type crystals have great potential for applications in the epitaxial growth of GaN materials.

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Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Cited by 10 publications

References 18 publications

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition

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