Low temperature growth of highly oriented TiN films by ion-assisted deposition

Grigorov, G.; Martev, I.N.; Stoyanova, M.; Vignes, J.‐L.; Langeron, J.P.

doi:10.1016/0040-6090(91)90335-u

Cited by 17 publications

(3 citation statements)

References 14 publications

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“…Although a lot of work has been published focusing on the influence of ion energy in physical vapor deposition (PVD) or ion-assisted processes for metal based coatings [28,29,[37][38][39][40][41][42], yet, only little work has been published correlating the average ion energy and the atomic oxygen flux with the properties of barrier coatings for polymers in PECVD processes. Starostin et al [11] and Elam et al [36] estimated the energy spent per precursor molecule in a plasma assisted atmospheric pressure process for the deposition of silicon oxide barrier coatings and reported an increase of barrier performance for an increased energy spent per precursor molecule.…”

Section: Influence Of Average Ion Energy and Atomic Oxygen Flux Per S...mentioning

confidence: 99%

Influence of average ion energy and atomic oxygen flux per Si atom on the formation of silicon oxide permeation barrier coatings on PET

Mitschker

Wissing

Hoppe

et al. 2018

J. Phys. D: Appl. Phys.

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The respective effect of average incorporated ion energy and impinging atomic oxygen flux on the deposition of silicon oxide (SiOx) barrier coatings for polymers is studied in a microwave driven low pressure discharge with additional variable RF bias. Under consideration of plasma parameters, bias voltage, film density, chemical composition and particle fluxes, both are determined relative to the effective flux of Si atoms contributing to film growth. Subsequently, a correlation with barrier performance and chemical structure is achieved by measuring the oxygen transmission rate (OTR) and by performing x-ray photoelectron spectroscopy. It is observed that an increase in incorporated energy to 160 eV per deposited Si atom result in an enhanced cross-linking of the SiOx network and, therefore, an improved barrier performance by almost two orders of magnitude. Furthermore, independently increasing the number of oxygen atoms to 10 500 per deposited Si atom also lead to a comparable barrier improvement by an enhanced cross-linking.

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Section: Influence Of Average Ion Energy and Atomic Oxygen Flux Per S...mentioning

confidence: 99%

Influence of average ion energy and atomic oxygen flux per Si atom on the formation of silicon oxide permeation barrier coatings on PET

Mitschker

Wissing

Hoppe

et al. 2018

J. Phys. D: Appl. Phys.

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“…1 Films grown with no external substrate heating are columnar and underdense, as demonstrated by open inter-and intra-columnar voids visible in cross-sectional transmission electron microscopy images and by X-ray reflectivity results. [2][3][4][5] Thus, these layers exhibit low nanoindentation hardness and elastic modulus values. Applying ion bombardment during film growth is often used to enhance densification by providing continuous near-surface ion mixing and enhancing adatom mean-free paths.…”

Section: Introductionmentioning

confidence: 99%

Growth of dense, hard yet low-stress Ti0.40Al0.27W0.33N nanocomposite films with rotating substrate and no external substrate heating

Tengstrand

Bakhit

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…[1][2][3][4][5] A feature of this arc discharge is that titanium as well as nitrogen gas have a high degree of ionization due to charge transfer from Ti ϩ to nitrogen gas, and emissions from both Ti ϩ and N 2 ϩ are very intense. [1][2][3][4][5] A feature of this arc discharge is that titanium as well as nitrogen gas have a high degree of ionization due to charge transfer from Ti ϩ to nitrogen gas, and emissions from both Ti ϩ and N 2 ϩ are very intense.…”

Section: Introductionmentioning

confidence: 99%

Excitation states of titanium and nitrogen gas in an electron beam evaporation sustained arc

Xiao

Tsuzuki

Sugimura

et al. 1999

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Measurement and modeling of molecular ion concentrations in a hydrogen reflex-arc discharge Phys. Plasmas 9, 4330 (2002); 10.1063/1.1503070Determination of temperature in an arc discharge plasma by using a double probe AIP Conf.The arc discharge studied in this work was sustained by titanium vapor evaporated by an electron beam in nitrogen atmosphere. Optical emission spectroscopy and Langmuir probe diagnostics were carried out to study the excitation of titanium and nitrogen. It was found that with increasing arc current, Ti and nitrogen gas exhibited an opposite tendency of excitation. When arc current increased from 20 to 60 A, Ti was highly excited to Ti ϩ , while the excitation of nitrogen was lowered; this is completely different from that for a conventional cathodic arc, where both Ti and N 2 are highly ionized. By Langmuir probe diagnostics, the electron energy distribution followed a two-Maxwellian distribution at an arc current of 60 A; the electron temperatures were 0.98 and 10.1 eV, and the corresponding electron densities were 2.7ϫ10 11 and 3.9ϫ10 9 cm 3 , respectively. This result provided a theoretical explanation for the difference of excitation between titanium and nitrogen in this arc.

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Low temperature growth of highly oriented TiN films by ion-assisted deposition

Cited by 17 publications

References 14 publications

Influence of average ion energy and atomic oxygen flux per Si atom on the formation of silicon oxide permeation barrier coatings on PET

Influence of average ion energy and atomic oxygen flux per Si atom on the formation of silicon oxide permeation barrier coatings on PET

Growth of dense, hard yet low-stress Ti0.40Al0.27W0.33N nanocomposite films with rotating substrate and no external substrate heating

Excitation states of titanium and nitrogen gas in an electron beam evaporation sustained arc

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