Low temperature growth of highly conductive boron-doped germanium thin films by electron cyclotron resonance chemical vapor deposition

Chang, Teng-Hsiang; Chang, Che‐Cheng; Chu, Yen-Ho; Lee, Chien Chieh; Chang, Jenq Yang; Chen, I-Chen; Li, Tomi

doi:10.1016/j.tsf.2013.11.099

Cited by 5 publications

(2 citation statements)

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“…The high concentration in situ or ex situ doping of Si 1– x Ge x and Ge thin films has attracted significant research interest recently due to its wide ranging applications in state-of-the-art complementary metal-oxide-semiconductor (CMOS) technology, − monolithically integrated photonic and optoelectronic devices on Si, − and spintronics. , Although significant effort has been devoted toward achieving heavily doped Si 1– x Ge x and Ge − materials exhibiting monocrystalline structure, , high dopant activation levels, , and low surface roughness, little to no attention has been given to the origin of the B-induced Ge crystal distortion that has been repeatedly observed in practice. Moreover, as complex heterostructures become increasingly desirable in future device technologies owing to their unique electronic and optical properties, the integration of intrinsic and doped Ge thin films on multiple substrate platforms will be essential.…”

Section: Introductionmentioning

confidence: 99%

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

Clavel

Greene‐Diniz

Grüning

et al. 2019

ACS Appl. Electron. Mater.

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A joint experimental and theoretical framework for the decoupling of boron (B) doping and stoichiometric-induced modifications to the structural properties and electronic band structure of germanium (Ge)/AlAs(001) heterostructures is presented. The effect of B-induced stress on nearest-neighbor Ge bonds is quantified via X-ray diffractometry and Raman spectroscopic analysis and subsequently interpreted through the lens of density functional perturbation theory. Similarly, experimental determination of the energy band alignment at the p-type Ge:B/AlAs heterointerface is understood using a density functional theory approach to model the influence of heterointerface stoichiometry and interatomic bonding between group IV and III–V interfacial atoms on the valence and conduction band discontinuities. The modeled two monolayer interatomic diffusion at the Ge/AlAs heterointerface is confirmed via atom probe tomography analysis, demonstrating a ∼6 Å interfacial width. These results present a unified picture of the Ge:B/AlAs(001) material system, highlighting the influence of B on its structural and electronic properties, and provide a path for the engineering of such heterointerfaces through high concentration dopant incorporation within the overlying Ge epilayer.

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Section: Introductionmentioning

confidence: 99%

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

Clavel

Greene‐Diniz

Grüning

et al. 2019

ACS Appl. Electron. Mater.

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“…In our previous studies, we obtained the amorphous to microcrystalline silicon phase transition at a lower hydrogen dilution ratio (H 2 /SiH 4 = 0.71) compared with PECVD, demonstrating the high dissociation of ECR-CVD [26]. Moreover, we can deposit the Ge thin films with high crystallinity and conductivity on glass substrates using ECR-CVD [27]. Recently, Platen et al successfully grew epitaxial Si thin films at low temperature using ECR-CVD [28].…”

Section: Introductionmentioning

confidence: 86%

Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

Chang

Chu

et al. 2014

International Journal of Photoenergy

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This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.

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Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

Kuo

Lee

et al. 2017

Solid-State Electronics

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Low temperature growth of highly conductive boron-doped germanium thin films by electron cyclotron resonance chemical vapor deposition

Cited by 5 publications

References 25 publications

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

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