Optical guided wave (OGW) devices. based on LiNb03 or GaAs, are commercially available products with established markets and applications. While LiNbO3 presently dominates the commercial applications, there are several drivers for the development of improved electro-optic (EO) materials. If the appropriate ccstal quality could be obtained for thin-film BaTiO3 supported on MgO for example, or for an integrated BaTi03MgO structure on silicon or GaAs, then the optimum OGW device structure might be realized. We will report on our results for the growth of optical qual@-, epitaxial BaTi03 and SrTiO3 on single-crystal MgO substrates using source shuttering molecular beam epitaxy W E ) techniques. We will also discuss how these materials can be integrated onto silicon. Our MBE studies show that, for this important class of perovskite oxides, heteroepitaxy between the perovskites and alkaline earth oxides is dominated by interfacial electrostatics at the first atomic layers. We have been able to demonstrate that a layer-by-layer energy minimization associated with interfacial electrostatics leads to the growth of high quality thin films of these materials. We have fabricated waveguides from these materials, and the optical clarity and loss coefficients have been characterized and found to be comparable to in-diffused waveguide structures typically represented by Ti drifted LiNbO3.