1990
DOI: 10.1103/physrevb.41.7961
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Low-temperature growth of MgO by molecular-beam epitaxy

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Cited by 124 publications
(52 citation statements)
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“…[76][77][78][79][80]110,113,117,119,124,157 A low growth temperature is frequently used to kinetically minimize subsequent bulk reordering and to minimize the loss of the customized (and often metastable) layered structures. The huge difference between surface and bulk diffusion rates in oxides 182,183 enables the growth of films with excellent structural order while at the same time preserving the potentially metastable layering of an oxide superlattice.…”
Section: August 2008mentioning
confidence: 99%
“…[76][77][78][79][80]110,113,117,119,124,157 A low growth temperature is frequently used to kinetically minimize subsequent bulk reordering and to minimize the loss of the customized (and often metastable) layered structures. The huge difference between surface and bulk diffusion rates in oxides 182,183 enables the growth of films with excellent structural order while at the same time preserving the potentially metastable layering of an oxide superlattice.…”
Section: August 2008mentioning
confidence: 99%
“…The alkaline earth oxides, BaO, Sa, CaO and MgO are NaC1-type cubic oxides that grow at anomalously low temperatures relative to their absolute melting points (12,13), and in a series of papers (14-16) we have 'shown that these oxides grow heteroepikxially on silicon starting with an exactly lattice-matched B% 725Sr0.2750. This oxide forms readily on any of the three low index planes of silicon, but a pure { 1 1 I } plane epitaxy is not obtainable with these oxides since NaCI-type structures have unstable (1 11) surfaces due to surface dipoles.…”
Section: Batiol On Mgqmentioning
confidence: 99%
“…Af k=1 Quk (1) Here, n is the number of poles, gk are the normalized series inductances and shunt capacitances values of the low pass prototype filter, Quk is the unloaded quality factor for the k-th resonator, and Af is the filter's bandwidth. Assuming a Chebyshev 4-pole filter with 0.01 dB equal amplitude ripple and the use of identical resonators, equation (1) becomes:…”
Section: Bmentioning
confidence: 99%
“…It has recently been suggested [1] that fast diffusion on the neutral cleavage planes of strongly ionic systems can make epitaxial growth possible down to remarkably low temperatures -0.1 Tm, Tm being the melting temperature of the material being grown. These workers have grown single crystalline thin films of (100) MgO on (100) surfaces of MgO substrates at temperatures as low as 140 K. Their explanation is that the corrugated electrostatic potential due to the ions decays exponentially outside a neutral ionic surface to leave only weak barriers impeding the mobility of surface species.…”
mentioning
confidence: 99%