1982
DOI: 10.1063/1.93001
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Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane

Abstract: Lowtemperature highly preferred polycrystalline Si film growth on crystallized amorphous Si by reactive ion beam deposition J. Vac. Sci. Technol. B 7, 1338 (1989; 10.1116/1.584535Lowtemperature formation of polycrystalline silicon films on silicon oxide by pyrolyzing silane in a tungsten heater Polycrystalline Si and Ge films have been grown on amorphous Si0 2 substrates (average Tsubstrate < 120°C) by the photodissociation ofSiH 4 /N 2 or GeH4/He mixtures, respectively, using pulsed ArF (193 nm) and KrF (248 … Show more

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Cited by 87 publications
(2 citation statements)
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“…497,537,538,539,540 Early work on photo-assisted thin film deposition focused primarily on Hg sensitized photolytic chemical vapor deposition (CVD) methods. 498 However, Hg sensitized methods quickly fell out of favor due to both environmental, health, and metal contamination issues, 526 and the emergence of CO2 IR lasers 541 and a variety of halogen excimer UV lasers 542 that enabled both direct pyrolytic and photolytic CVD, respectively. 497 Beyond these initial beginnings, the evolution of photo-assisted deposition has largely followed and built upon the development and technical advancement associated with high-intensity lamps and lasers spanning the IR-visible-UV wavelength range.…”
Section: V32 Uv-assisted Film Depositionmentioning
confidence: 99%
“…497,537,538,539,540 Early work on photo-assisted thin film deposition focused primarily on Hg sensitized photolytic chemical vapor deposition (CVD) methods. 498 However, Hg sensitized methods quickly fell out of favor due to both environmental, health, and metal contamination issues, 526 and the emergence of CO2 IR lasers 541 and a variety of halogen excimer UV lasers 542 that enabled both direct pyrolytic and photolytic CVD, respectively. 497 Beyond these initial beginnings, the evolution of photo-assisted deposition has largely followed and built upon the development and technical advancement associated with high-intensity lamps and lasers spanning the IR-visible-UV wavelength range.…”
Section: V32 Uv-assisted Film Depositionmentioning
confidence: 99%
“…One -in situ doping -involves photodissociating the parent molecule for the dopant at the same time that the crystal is being grown. Germanium and silicon films have been doped, for example, by photodissociating GeH4 (or SiH4) and TMA simultaneously [8]. The more commonly used technique, however, is to ac complish two tasks with the laser.…”
Section: Dopingmentioning
confidence: 99%