Lowtemperature highly preferred polycrystalline Si film growth on crystallized amorphous Si by reactive ion beam deposition J. Vac. Sci. Technol. B 7, 1338 (1989; 10.1116/1.584535Lowtemperature formation of polycrystalline silicon films on silicon oxide by pyrolyzing silane in a tungsten heater Polycrystalline Si and Ge films have been grown on amorphous Si0 2 substrates (average Tsubstrate < 120°C) by the photodissociation ofSiH 4 /N 2 or GeH4/He mixtures, respectively, using pulsed ArF (193 nm) and KrF (248 nm) excimer lasers. For both Si and Ge, the film growth rate exhibited a strong dependence on laser wavelength and beam intensity I, where 15<1..;;.20 MW cm-2 • Asdeposited films exhibited average grain sizes of up to 0.5 f.,lm and the grains were equiaxed with a random orientation. Ge films doped with _10 20 cm-3 Al were obtained by the simultaneous photodissociation of AI(CH 3 b and GeH 4 .

No abstract