Low-temperature growth of polycrystalline SiC by catalytic CVD from monomethylsilane

Kaneko, Tsutomu; Hosokawa, Y.; Suga, Tadatomo; Miyakawa, Nobuaki

doi:10.1016/j.mee.2005.10.052

Cited by 17 publications

(9 citation statements)

References 15 publications

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“…They found that the produced pc -Si thin films had different material properties when using W and Ta as filament materials. This difference is due to the different catalytic properties and surface reactions mechanisms on the two filaments, as demonstrated by Duan et al For the deposition of silicon carbide thin films using MMS in HWCVD, different materials, including W, Ta, and Re, have been used. − On the basis of the view that filament is a key component and that the most cost-effective filaments are W and Ta, the influence of different materials of W and Ta on the gas-phase reaction chemistry was examined in this work.…”

Section: Resultsmentioning

confidence: 99%

“…Among the four methyl-substituted silane molecules, monomethylsilane (MMS) has received the most attention as a precursor gas for the formation of silicon carbide thin film materials using chemical vapor deposition (CVD). Reports have been found in using MMS in the processes of plasma-enhanced CVD (PECVD), − low-pressure CVD (LPCVD), − and hot-wire CVD (HWCVD, also known as catalytic CVD). − Amorphous, crystalline, as well as microcrystalline SiC thin films have been produced. Main advantages of using MMS lie in the fact that the direct Si–C bond exists in the molecule and that the molecule has the same Si:C composition as in solid SiC materials.…”

Section: Introductionmentioning

confidence: 99%

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Dominance of Silylene Chemistry in the Decomposition of Monomethylsilane in the Presence of a Heated Metal Filament

Toukabri

Shi

2014

J. Phys. Chem. A

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The gas-phase reaction chemistry of the decomposition of monomethylsilane (MMS) has been studied in the presence of a heated metal filament in a hot-wire chemical vapor deposition (HWCVD) reactor. A 10.5 eV vacuum ultraviolet laser single-photon ionization time-of-flight mass spectrometry was employed in combination with isotope labeling and chemical trapping to examine the mechanistic details in the reaction chemistry. We have demonstrated the dominant involvement of the methylsilylene (HSiCH3) intermediate in the gas-phase reaction chemistry. Free radical and silene intermediates do not play a role. Major products are found to be H2, 1,2-dimethyldisilane (DMDS), and 1,3-disilacyclobutane (DSCB). The formation of DMDS proceeds by the insertion reaction of methylsilylene, whereas DSCB originates from the dimerization reaction of methylsilylene. Similar reaction chemistry has been observed when using the different filament materials of tungsten and tantalum in the HWCVD reactor. This indicates that changing the filament material from Ta to W does not affect the gas-phase reaction chemistry when using MMS in the HWCVD process. Finally, comparison of the reaction chemistry of MMS with those of dimethylsilane, trimethylsilane, and tetramethylsilane sheds light on the influence of increasing Si-H bonds. A switch in the dominated chemistry from free-radical short-chain reactions to silylene insertion/dimerization reactions occurs as the number of Si-H bonds increases in the four methyl-substituted silane molecules.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dominance of Silylene Chemistry in the Decomposition of Monomethylsilane in the Presence of a Heated Metal Filament

Toukabri

Shi

2014

J. Phys. Chem. A

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“…However, they have drawbacks such as needing a high process temperature, difficulty in the photolithography process and poor thermal stability [4][5][6]. As a wide bandgap semiconductor, SiC film can be found in electronic devices in the field of high temperature resistance, thermal conductivity and optical applications because of its stability and excellent characteristics [7][8][9]. These unique properties make amorphous silicon carbide (a-SiC) passivation layer an excellent alternative material for silicon solar cells [10,11].…”

Section: Introductionmentioning

confidence: 99%

The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

Seo

Choi

et al. 2011

Journal of Crystal Growth

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“…The absence of ion bombardment on the film surface is another added advantage as it reduces defects in the film structure. 10 Generally, in order to deposit SiC films by this technique, different gas sources are employed such as monomethylsilane (MMS)/H 2 , [11][12][13][14][15] SiH 4 /CH 4 /H 2 , [16][17][18] SiH 4 /C 2 H 2 /H 2 9 and SiH 4 /C 2 H 6 /H 2 . 19 Amorphous SiC films are usually reported to be formed when C 2 H 2 or C 2 H 6 is used as the carbon sources, 19,20 while formation of crystalline SiC thin films has been reported mostly from the use of CH 4 and SiH 4 gas mixture 21 or MMS gas sources with high dilution in hydrogen.…”

Section: Introductionmentioning

confidence: 99%

Transformation from amorphous to nano-crystalline SiC thin films prepared by HWCVD technique without hydrogen dilution

Tehrani

2015

Bull Mater Sci

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Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposition (HWCVD) technique using silane (SiH 4) and methane (CH 4) gases without hydrogen dilution. The effects of SiH 4 to CH 4 gas flow ratio (R) on the structural properties, chemical composition and photoluminescence (PL) properties of the films deposited at the different gas flow ratios were investigated and compared. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectra revealed a structural transition from amorphous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering confirmed the multi-phased nature of the films. Auger electron spectroscopy showed that the carbon incorporation in the film structure was strongly dependent on the gas flow ratio. A similar broad visible room-temperature PL with two peaks was observed for all SiC films. The main PL emission was correlated to the band to band transition in uniform a-SiC phase and the other lower energy emission was related to the confined a-Si : H clusters in a-SiC matrix. SiC nano-crystallites exhibit no significant contribution to the radiative recombination.

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Low-temperature growth of polycrystalline SiC by catalytic CVD from monomethylsilane

Cited by 17 publications

References 15 publications

Dominance of Silylene Chemistry in the Decomposition of Monomethylsilane in the Presence of a Heated Metal Filament

Dominance of Silylene Chemistry in the Decomposition of Monomethylsilane in the Presence of a Heated Metal Filament

The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

Transformation from amorphous to nano-crystalline SiC thin films prepared by HWCVD technique without hydrogen dilution

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