Low temperature growth of SiO2 films on Si(100) using a hot molecular beam of tetraethoxysilane

Bonzel, H.P.; Pirug, G.; Verhasselt, J.Ch.

doi:10.1016/s0009-2614(97)00414-4

Cited by 11 publications

(8 citation statements)

References 22 publications

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“…The difference in energy between the O 1s and Si 2p core levels was found to be 429.5 eV in the oxide grown in our experiment, which is equivalent to the value found in the literature. 38 This finding suggests that the quality of our film is consistent with SiO 2 grown on Si. Figure 7 shows the O 1s core level for p-type GaN CV cleaned, oxidized, and SiO 2 surfaces.…”

Section: Resultssupporting

confidence: 73%

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Cook

Fulton

Mecouch

et al. 2003

Journal of Applied Physics

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The band alignment at the SiO 2-GaN interface is important for passivation of high voltage devices and for gate insulator applications. X-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy have been used to observe the interface electronic states as SiO 2 was deposited on clean GaN͑0001͒ surfaces. The substrates, grown by metallorganic chemical vapor deposition, were n-(1ϫ10 17) and p-type (2ϫ10 18) GaN on 6H-SiC͑0001͒ with an AlN͑0001͒ buffer layer. The GaN surfaces were atomically cleaned via an 860°C anneal in an NH 3 atmosphere. For the clean surfaces, n-type GaN showed upward band bending of 0.3Ϯ0.1 eV, while p-type GaN showed downward band bending of 1.3Ϯ0.1 eV. The electron affinity for n-and p-type GaN was measured to be 2.9Ϯ0.1 and 3.2Ϯ0.1 eV, respectively. To avoid oxidizing the GaN, layers of Si were deposited on the clean GaN surface via ultrahigh vacuum e-beam deposition, and the Si was oxidized at 300°C by a remote O 2 plasma. The substrates were annealed at 650°C for densification of the SiO 2 films. Surface analysis techniques were performed after each step in the process, and yielded a valence band offset of 2.0Ϯ0.2 eV and a conduction band offset of 3.6Ϯ0.2 eV for the GaN-SiO 2 interface for both p-and n-type samples. Interface dipoles of 1.8 and 1.5 eV were deduced for the GaN-SiO 2 interface for the n-and p-type surfaces, respectively.

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Section: Resultssupporting

confidence: 73%

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Cook

Fulton

Mecouch

et al. 2003

Journal of Applied Physics

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“…4) where it is evident that for the lower temperature treated sample, the Si 2p peak is larger and characterized by a centroid shifted to lower BE [22]. However, the sample treated at 800 • C presents a Si 2p peak maximum at 103.5 eV and a lower full width at half maximum, observations which are compatible with fully oxidized SiO 2 .…”

Section: Elementsmentioning

confidence: 67%

Comparison study of conductometric, optical and SAW gas sensors based on porous sol–gel silica films doped with NiO and Au nanocrystals

Gaspera

Buso

Guglielmi

et al. 2010

Sensors and Actuators B: Chemical

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Conductometric, optical and surface acoustic wave gas sensors based on sol-gel silica porous films doped with NiO and Au nanoparticles are studied. The nanocomposite films are characterized by optical absorption in the visible and near-infrared region, spectroscopic ellipsometry, X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) analysis and X-ray photoemission spectroscopy (XPS). They show poor conductometric gas sensing response toward CO and H 2 . However, both optical and surface acoustic wave (SAW) responses are reversible and stable to H 2 . Moreover, exploiting the wavelength dependence of the optical sensor response it is possible to selective recognition of H 2 . Choosing the appropriate wavelength, almost no variation in absorption is observed when introducing different gases into the testing chamber.

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“…The 286.4 eV peak can be assigned to methylene ͑C-CH 2 -C͒ and methyl ͑C-CH 3 ͒ carbons and the 287.9 eV peak corresponds to the carbon atom bonded to oxygen and another carbon ͑O-CH 2 -C͒. 12 The relative area ratio of the 286.9 eV peak to the 287.9 eV peak is about 3:1. These results clearly demonstrate that TBOS is molecularly adsorbed on Si͑100͒ at 150 K.…”

Section: Resultsmentioning

confidence: 98%

Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100)

Lee

Yong

Jeong

et al. 2005

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Adsorption and reactions of tetrabutoxysilane (Si(OC4H9)4) on a Si(100) surface were investigated using temperature programmed desorption and x-ray photoelectron spectroscopy. Physisorbed tetrabutoxysilane undergoes C–O bond scission to form –O–Si(OC4H9)3 and butyl species on Si(100) at 200K. It is observed that further C–O bond scission takes place sequentially in the temperature range of 200–500K. Main desorption products are butene and hydrogen, which are desorbed at 410K and 820K, respectively. We propose that the production of butene takes place through β-hydride elimination of the butyl group on Si(100).

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Low temperature growth of SiO2 films on Si(100) using a hot molecular beam of tetraethoxysilane

Cited by 11 publications

References 22 publications

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Comparison study of conductometric, optical and SAW gas sensors based on porous sol–gel silica films doped with NiO and Au nanocrystals

Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100)

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